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Electronics and Microelectronics, Instrumentation
Engineering, general
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Chapter
Hf-Based High-k Gate Dielectric Processing
This chapter focuses on the processing of Hf-based high-k gate dielectric film and its device fabrication to improve its electrical properties. First, the formation process of Hf-based high-k dielectric thin f...
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Crystalline Oxides on Silicon
The ability to integrate crystalline metal oxide dielectric layers into silicon structures can open the way for a variety of novel applications which enhances the functionality and flexibility, ranging from hi...
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V FB /V TH Anomaly in High-k Gate Stacks
One of the biggest challenges of metal/high-k gate stack technology is controlling the threshold voltage (V TH ) because achieving a high performance CMOS is almost im...
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Reliability Implications of Fast and Slow Degradation Processes in High-k Gate Stacks
Aggressive transistor scaling to achieve better chip functionality is driving the introduction of high-k dielectric materials into traditional device gate stacks. These advanced gate stacks are multilayer stru...
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Introduction to High-k Gate Stacks
The manifold aim of this chapter is: (1) to present a simple summary of the contents of the eleven other chapters of the book in a manner as continuous and cohesive as possible; (2) more importantly, to provid...
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Hafnium-Based Gate Dielectric Materials
In this chapter, we focus on hafnium-based gate dielectrics. HfO2 is regarded as the most promising material for the high–k gate dielectrics owing to its large dielectric constant and large band-gap energy. In th...
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Ternary HfO2 and La2O3 Based High-k Gate Dielectric Films for Advanced CMOS Applications
We first discuss HfO2-based ternary high-k dielectric films. We emphasize that ternary materials do not only exhibit average properties expected by the mean-media model, but that they also reveal unexpected prope...
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Metal Gate Electrodes
Metal gate electrodes are a vital enabler for the use of high-k gate dielectrics in advanced complimentary metal oxide semiconductor (CMOS) technology. This chapter will detail how metal gate electrodes were s...
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High Mobility Channels
The need for high-κ gate dielectrics and metal gates for advanced integrated circuits has re-opened the door to germanium and III–V compounds as potential replacements for silicon channels, offering the possib...
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Channel Mobility
Effective channel mobility, μeff, of high-k gate dielectrics in various device technologies is discussed in detail. Initially, the background on mobility is provided with brief explanations on different scatterin...
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Lanthanide-Based High-k Gate Dielectric Materials
This chapter covers selected issues related to lanthanides (or lanthanoids) used in oxide gate dielectrics. In general, lanthanides offer key material property advantages for gate dielectric applications. Thes...
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MOSFET: Basics, Characteristics, and Characterization
This chapter attempts to provide a theoretical basis for the Metal Oxide (Insulator) Semiconductor (MOS/MIS) Structure and the MOS/MIS Field Effect Transistor (MOSFET/MISFET), their characteristics, and their ...
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Solides organiques « réels »: structure de bande et caractéristiques électroniques
La prise en compte de tous les niveaux électroniques qui peuvent apparaître dans un solide organique conduit à un schéma de bande quelque peu compliqué de prime abord.
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Electrical Stability (Read and Write Operations)
In SRAM, read and write are fundamental operations. To ensure the correct operations, the stability analysis is indispensable. In this chapter, electrical stability analysis is explained. In Sect. 3.1, the SRA...
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Propriétés de transport électronique II — Mécanismes d’injection et de transport dans les milieux relativement résistifs
Dans les chapitres précédents, nous avons essayé de préciser la structure électronique des matériaux organiques, puis la nature des niveaux électroniques excités à la suite de l’insertion d’une charge (indiffé...
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Low-Power Array Design Techniques
This chapter introduces circuit technologies that enhance electric stability of the cell, the latest technologies that provide moderate timing generation, as well as larger cell stability. In Sect. 5.1, the vo...
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Élaboration des composants organiques et caractérisations électriques et optoélectroniques
Dans ce chapitre, nous présenterons dans un premier temps les méthodes de mise en forme des matériaux organiques et notamment les méthodes de dépôts. Nous décrirons également les méthodes de réalisation des él...
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Future Technologies
The design solution described in Chap. 5 will help the minimum operating voltage (VDDmin) of a general 6T single-port SRAM. However, it will eventually face the limitation of the SRAM VDDmin because of the degrad...
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Les diodes électroluminescentes organiques et leurs applications (affichage, éclairage)
La propriété spécifique des matériaux organiques (moléculaires et macromoléculaires) de pouvoir être déposés sur un substrat quelconque, notamment souple, a suscité, de longue date, des recherches pour les uti...
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Le photovoltaïque organique (OPV)
De façon générale, les processus photoélectroniques correspondent aux processus engendrés par l’absorption ou l’émission d’un rayonnement par la matiére. Différents effets peuvent être engendrés dans les solid...
