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Lanthanide-Based High-k Gate Dielectric Materials

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High Permittivity Gate Dielectric Materials

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 43))

Abstract

This chapter covers selected issues related to lanthanides (or lanthanoids) used in oxide gate dielectrics. In general, lanthanides offer key material property advantages for gate dielectric applications. These include high dielectric constants, stable amorphous silicate (or ternary) phases, thermodynamic stability with Si, interface properties allowing threshold voltage tuning, and crystalline properties making possible epitaxial growth on Si and other semiconductors. Although not as heavily researched as Hf-based materials, lanthanide materials continue to hold promise for device scaling on Si, and as dielectrics on other high-mobility semiconductors.

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    Daniel J. Lichtenwalner

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    Samares Kar

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Lichtenwalner, D.J. (2013). Lanthanide-Based High-k Gate Dielectric Materials. In: Kar, S. (eds) High Permittivity Gate Dielectric Materials. Springer Series in Advanced Microelectronics, vol 43. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-36535-5_9

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