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  1. No Access

    Article

    Impact of surface phase coexistence on the development of step-free areas on Si(111)

    The step-flow growth condition of Si on Si(111) near the (7×7)-“1×1” surface phase transition temperature T C are analyzed within the framework of Burton-Cabrera-Frank theory. In particular, coexi...

    Andreas Fissel, Ayan Roy Chaudhuri, Jan Krügener… in Frontiers of Materials Science (2015)

  2. No Access

    Chapter

    Crystalline Oxides on Silicon

    The ability to integrate crystalline metal oxide dielectric layers into silicon structures can open the way for a variety of novel applications which enhances the functionality and flexibility, ranging from hi...

    H. Jörg Osten in High Permittivity Gate Dielectric Materials (2013)

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    Article

    Epitaxial Lanthanide Oxide based Gate Dielectrics

    Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm CMOS technology. We present results for crystalline gadolinium oxides ...

    H. Jörg Osten, Apurba Laha, Andreas Fissel in MRS Online Proceedings Library (2009)

  4. No Access

    Chapter

    Molecular Beam Epitaxy of Rare-Earth Oxides

    We present results for crystalline lanthanide oxides on silicon with the Ln2O3 composition (Ln = Pr, Nd and Gd) in the cubic bixbyite structure grown by solid state molecular beam epitaxy (MBE). On Si(001)-orient...

    H. Jörg Osten, Eberhard Bugiel, Malte Czernohorsky… in Rare Earth Oxide Thin Films (2007)

  5. No Access

    Chapter and Conference Paper

    Si1−x−yGexCy alloys: Growth and properties of a new semiconducting material

    The growth and properties of Si1−y Cy and Si1−x−y GexCy alloys pseudomorphically strained on Si(001) is reviewed. Although the bulk solubility of carbon in silicon is sma...

    H. Jörg Osten in Advances in Solid State Physics 38 (1999)