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Open AccessA tunable ferroelectric based unreleased RF resonator
This paper introduces the first tunable ferroelectric capacitor (FeCAP)-based unreleased RF MEMS resonator, integrated seamlessly in Texas Instruments’ 130 nm Ferroelectric RAM (FeRAM) technology. The designs ...
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Low-Frequency Noise in III–V, Ge, and 2D Transistors
Novel channel materials such as III–V, Ge, and 2D materials have long been considered as replacement channel materials for post-Si CMOS applications. Low-frequency noise characterization can be used as alterna...
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Chemical Exfoliation of Black Phosphorus for Nanoelectronics Applications
Chemically exfoliated two-dimensional (2D) materials have shown promise in a variety of applications such as thin film transistors and photovoltaic devices. Here, we present a scalable method for preparing bla...
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High Mobility Channels
The need for high-κ gate dielectrics and metal gates for advanced integrated circuits has re-opened the door to germanium and III–V compounds as potential replacements for silicon channels, offering the possib...
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Fabrication of fully transparent nanowire transistors for transparent and flexible electronics
The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including ‘see-through’ and conformab...
