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  1. No Access

    Chapter

    Channel Mobility

    Effective channel mobility, μeff, of high-k gate dielectrics in various device technologies is discussed in detail. Initially, the background on mobility is provided with brief explanations on different scatterin...

    Chadwin Young in High Permittivity Gate Dielectric Materials (2013)

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    Article

    Metrology Study of Sub 20Å Oxynitride by Corona-Oxide-Silicon (COS) and Conventional C-V Approaches

    This work aims to develop an in-line corona-oxide-silicon (COS) monitoring strategy for the sub 20 Å oxynitride gate dielectrics. The oxynitride gate dielectrics were composed of In-Situ Steam Generated oxide (IS...

    Pui Yee Hung, George A. Brown, Michelle Zhang… in MRS Online Proceedings Library (2011)