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  1. No Access

    Article

    STEM tomography study on structural features induced by MTJ processing

    The structure of a magnetic tunnel junction (MTJ) patterned by reactive ion etching is investigated in detail. Using a scanning transmission electron microscope (STEM) and energy-dispersive X-ray spectroscopy ...

    Masaaki Niwa, Kosuke Kimura, Toshinari Watanabe, Takanori Naijou… in Applied Physics A (2018)

  2. No Access

    Chapter

    Hf-Based High-k Gate Dielectric Processing

    This chapter focuses on the processing of Hf-based high-k gate dielectric film and its device fabrication to improve its electrical properties. First, the formation process of Hf-based high-k dielectric thin f...

    Masaaki Niwa in High Permittivity Gate Dielectric Materials (2013)

  3. No Access

    Chapter and Conference Paper

    PVD-HIGH-K GATE DIELECTRICS WITH FUSI GATE AND INFLUENCE OF PDA TREATMENT ON ON-STATE DRIVE CURRENT

    The electrical characteristics of high-k transistors using HfO2 and its silicate gate dielectrics are investigated. These dielectrics are formed by an oxidation of co-sputtered Hf (and Si), followed by nitridatio...

    MASAAKI NIWA, RIICHIROU MITSUHASHI… in Defects in High-k Gate Dielectric Stacks (2006)

  4. No Access

    Article

    SiO2/Si Interfaces Studied by STM and HRTEM

    The morphology of SiO2/Si interfaces in a semiconductor LOCOS active area grown by several oxidation conditions has been studied, to compare the roughness of the interfaces observed by STM and HRTEM in particular...

    Masaaki Niwa, Minoru Onoda, Hiroshi Iwasaki… in MRS Online Proceedings Library (1990)