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  1. Article

    Open Access

    Ultra-fast switching memristors based on two-dimensional materials

    The ability to scale two-dimensional (2D) material thickness down to a single monolayer presents a promising opportunity to realize high-speed energy-efficient memristors. Here, we report an ultra-fast memrist...

    S. S. Teja Nibhanupudi, Anupam Roy, Dmitry Veksler, Matthew Coupin… in Nature Communications (2024)

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  2. No Access

    Chapter

    Fundamentals of Metal-Oxide Resistive Random Access Memory (RRAM)

    Detailed operational and switching characteristics for metal-oxide resistive random access memory (RRAM) are presented, along with materials/vacancy engineering ramifications for the switching operations. The ...

    David C. Gilmer, Gennadi Bersuker in Semiconductor Nanotechnology (2018)

  3. No Access

    Article

    Toward reliable RRAM performance: macro- and micro-analysis of operation processes

    Resistive random access memory (RRAM) technology promises superior performance and scalability while employing well-developed fabrication processes. Conductance in insulating oxides employed in RRAM devices ca...

    Gennadi Bersuker, Dmitry Veksler… in Journal of Computational Electronics (2017)

  4. No Access

    Chapter

    Characterizing Defects Responsible for Charge Transport Characteristics at Interfaces of Nano-Thick Materials Stacks

    Major functioning blocks in modern devices employed in a variety of applications (electronics, energy harvesting, sensors, etc.) comprise of stacks of nm-thin layers of dielectric materials in contact with con...

    Gennadi Bersuker, Matthew B. Watkins… in Oxide Materials at the Two-Dimensional Lim… (2016)

  5. No Access

    Article

    Pioneering Application of Corona Charge-Kelvin Probe Metrology to Noncontact Characterization of In0.53 Ga0.47 As/Al2O3/HfO2 Stack

    We report the first successful application of corona charging noncontact C-V and I-V metrology to interface and dielectric characterization of high-k/III-V structures. The metrology, which has been commonly us...

    Alexandre Savtchouk, John D’Amico, Marshall Wilson… in MRS Online Proceedings Library (2014)

  6. No Access

    Chapter

    PBTI in High-k Oxides

    Interaction of different materials in the multilayer high-k/metal gate stacks results in the formation of structural defects in the high-k dielectric and interfacial SiO2 layer. This section discusses the impact ...

    Chadwin D. Young, Gennadi Bersuker in Bias Temperature Instability for Devices and Circuits (2014)

  7. No Access

    Chapter

    Reliability Implications of Fast and Slow Degradation Processes in High-k Gate Stacks

    Aggressive transistor scaling to achieve better chip functionality is driving the introduction of high-k dielectric materials into traditional device gate stacks. These advanced gate stacks are multilayer stru...

    Gennadi Bersuker in High Permittivity Gate Dielectric Materials (2013)

  8. No Access

    Article

    Challenges in Integrating the High-K Gate Dielectric Film to the Conventional Cmos Process Flow

    ZrO2 and HfO2 and their alloys with SiO2 are currently among the leading high-k materials for replacing SiOxNy as the gate dielectric for the sub-100 nm technology nodes. International SEMATECH (ISMT) is currentl...

    Avinash Agarwal, Michael Freiler, Pat Lysaght… in MRS Online Proceedings Library (2011)

  9. No Access

    Article

    Physical and Electrical Characterization of Hafnium Silicate Thin Films

    Evaluation of physically thicker gate insulator materials with significantly higher dielectric constants (k = 10 − 25) as potential replacements for silicon dioxide, SiO2 (k = 3.9), and silicon oxynitride continu...

    Patrick S. Lysaght, Brendan Foran, Gennadi Bersuker… in MRS Online Proceedings Library (2011)

  10. No Access

    Chapter

    Requirements of Oxides as Gate Dielectricsfor CMOS Devices

    Analysis of fundamental material properties of the d-electron-based high-k dielectrics, which are under consideration for the application as gate dielectrics, indicates that this class of materials has serious li...

    Gennadi Bersuker, Peter Zeitzoff in Rare Earth Oxide Thin Films (2007)

  11. No Access

    Chapter

    Novel Dielectric Materials for Future Transistor Generations

    Responding to the market growth for computational power in various applications, semiconductor technology continues unabated in its drive toward higher transistor densities and faster transistors. The general ...

    Gennadi Bersuker, Byoung H. Lee… in Nanotechnology for Electronic Materials an… (2007)

  12. No Access

    Article

    Computational Design of Silicon Suboxides: Chemical and Mechanical Forces on the Atomic Scale

    Silicon suboxides play an important role in different industrial applications, particularly in the form of the Si–SiO2 interface, which is one of the key elements in present day microelectronics and potentially i...

    Anatoli Korkin, Rodney J. Bartlett… in Journal of Computer-Aided Materials Design (2006)

  13. No Access

    Chapter and Conference Paper

    TRANSIENT CHARGING EFFECTS AND ITS IMPLICATIONS TO THE RELIABILITY OF HIGH-K DIELECTRICS

    Unlike SiO2-based devices, various structural defects and small band gaps in high-κ gate dielectrics make high-κ devices susceptible to electron charging. In particular, fast transient charging in high-κ devices ...

    BYOUNG HUN LEE, RINO CHOI, RUSTY HARRIS… in Defects in High-k Gate Dielectric Stacks (2006)

  14. No Access

    Chapter and Conference Paper

    STRUCTURE, COMPOSITION AND ORDER AT INTERFACES OF CRYSTALLINE OXIDES AND OTHER HIGH-K MATERIALS ON SILICON

    High-resolution medium energy ion scattering (MEIS) was used to investigate structure, composition and defects in amorphous and crystalline oxides, and their interface with silicon. Isotopic oxygen reactions w...

    TORGNY GUSTAFSSON, ERIC GARFUNKEL… in Defects in High-k Gate Dielectric Stacks (2006)

  15. No Access

    Article

    Physical and Electrical Characterization of Hafnium Silicate Thin Films

    Evaluation of physically thicker gate insulator materials with significantly higher dielectric constants (k = 10 – 25) as potential replacements for silicon dioxide, SiO2 (k = 3.9), and silicon oxynitride continu...

    Patrick S. Lysaght, Brendan Foran, Gennadi Bersuker… in MRS Online Proceedings Library (2003)

  16. No Access

    Article

    Experimental Observations of the Redistribution of Implanted Nitrogen at the Si-SiO2 Interface During RTA Processing

    The redistribution of nitrogen from silicon to the Si-SiO2 interface due to thermal processing is investigated by Secondary Ion Mass Spectroscopy (SIMS) using Metal-Oxide-Semiconductor (MOS) capacitors. SIMS prof...

    Patrick S. Lysaght, Billy Nguyen, Joe Bennett… in MRS Online Proceedings Library (1999)

  17. No Access

    Article

    Electroplated Cu Recrystallization in Damascene Structures at Elevated Temperatures

    Transformations in electroplated Cu films from a fine to course grain crystal structure (average grain sizes went from ∼0.1 µm to several microns) were observed to strongly depend on film thickness and geometr...

    Qing-Tang Jiang, Michael E. Thomas, Gennadi Bersuker… in MRS Online Proceedings Library (1999)