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High Mobility Channels

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High Permittivity Gate Dielectric Materials

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 43))

Abstract

The need for high-κ gate dielectrics and metal gates for advanced integrated circuits has re-opened the door to germanium and III–V compounds as potential replacements for silicon channels, offering the possibility to further increase the performances of future CMOS generations, as well as adding new circuit functionalities. In this chapter, we discuss the most important issues related to high-mobility channels, and highlight recent advances in the field, focusing on promising approaches for the passivation of their interface with high-κ gate dielectrics, as required for the fabrication of high-performance inversion mode metal-oxide-semiconductor field effect transistors.

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Acknowledgments

We are indebted to our colleagues for their valuable contribution to this work: B. De Jaeger, A. Delabie, F. Bellenger, J. Mittard, F. Leys, B. Kaczer, T. Conard, M. Caymax, M. Meuris, G. Pourtois (IMEC), D. Brunco (Intel), G. Wilk (ASM), B. Yang (AMD), K.K. Ng (SRC), M. Hong (NTHU), Y. Xuan, H.C. Lin, Y.Q. Wu, T. Yang, T. Shen, M. Xu (Purdue), C.L. Hinkle, E.M. Vogel, and R.M. Wallace (UT Dallas). Stimulating discussions with Professor V.V. Afanas’ev, Professor A. Stesmans (KU Leuven), Professor J. Woodall, and Prof. M.S. Lundstrom (Purdue) are gratefully acknowledged. The work on Ge has been financially supported by the IMEC Industrial Affiliation Program on Ge and III–V devices, the European Project IST-ET4US-2048 “Epitaxial Technologies for Ultimate Scaling”. The work on III–V has been supported by US National Science Foundation and SRC FCRP MSD Center.

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Authors and Affiliations

  1. Semiconductor Physics Laboratory, Department of Physics and Astronomy, Katholieke Universiteit Leuven, Celestijnenlaan 200D, B-3001, Leuven, Belgium

    Michel Houssa

  2. School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, 47907, USA

    Peide Ye

  3. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium

    Marc Heyns

  4. Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, B-3001, Leuven, Belgium

    Marc Heyns

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  1. Michel Houssa
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Correspondence to Michel Houssa .

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  1. Dept. Electrical Engineering, Indian Institute of Technology, Kanpur, 208016, India

    Samares Kar

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Houssa, M., Ye, P., Heyns, M. (2013). High Mobility Channels. In: Kar, S. (eds) High Permittivity Gate Dielectric Materials. Springer Series in Advanced Microelectronics, vol 43. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-36535-5_12

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