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Article
Study of Dopant Activation and Ionization for Phosphorus in 4H-SiC
Ion implantation is the most useful technology for do** of 4H silicon carbide to fabricate power devices. Semiconductor properties depend on implanted do** activation and ionization, and these properties a...
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Article
Performance and Reliability of SiC Power MOSFETs
Due to the wide bandgap and other key materials properties of 4H-SiC, SiC MOSFETs offer performance advantages over competing Si-based power devices. For example, SiC can more easily be used to fabricate MOSFE...
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Article
Comparison of channel mobility and oxide properties of MOSFET devices on Si-face (0001) and A-face (11-20) 4H-SiC
In this report we present results comparing lateral MOSFET properties of devices fabricated on Si-face (0001) and A-face (11-20) 4H-SiC, with nitric oxide passivation anneals. We observe a field-effect mobilit...
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Chapter
Lanthanide-Based High-k Gate Dielectric Materials
This chapter covers selected issues related to lanthanides (or lanthanoids) used in oxide gate dielectrics. In general, lanthanides offer key material property advantages for gate dielectric applications. Thes...
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Article
Gate Stack Reliability of high-Mobility 4H-SiC Lateral MOSFETs with Deposited AI2O3 Gate Dielectric
Lateral nMOSFETs have been fabricated on 4H-SiC utilizing deposited dielectrics and gate-last processing. A bi-layer dielectric was utilized consisting of thin nitrided SiO2 covered by 25nm of Al2O3 deposited usi...
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Article
Interface and Electrical Properties of Atomic-layer-deposited HfAlO Gate Dielectric for N-channel GaAs MOSFETs
The interface and electrical properties of HfAlO dielectric formed by atomic layer deposition (ALD) on sulfur-passivated GaAs were investigated. X-ray photoelectron spectroscopy (XPS) revealed the absence of a...
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Article
Effect of GaAs Surface Treatments on Lanthanum Silicate High-K Dielectric Gate Stack Properties
The properties of lanthanum silicate (LaSiOx) gate stacks on GaAs substrates have been examined, comparing different GaAs pretreatments; namely a) as-received, b) HCl-treated, and c) sulphur-treated. X-ray pho...
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Article
Epitaxial Growth of High-κ Dielectrics for GaN MOSFETs
High-dielectric constant (high-κ) oxide growth on hexagonal-GaN (on sapphire) is examined for potential use in enhancement-mode metal oxide semiconductor field effect transistor (MOSFET). Enhancement-mode MOSF...
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Article
Processing Impact on Electrical Properties of Lanthanum Silicate Thin Films
The consequence of tungsten metal purity on the electrical properties of an annealed MOS gate stack with a lanthanum silicate gate dielectric has been investigated. Optimization of the electrical and physical ...
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Article
Ion-Beam Reactive Sputter Deposition of MgO Thin Films on Silicon and Sapphire Substrates
MgO thin films were deposited on silicon and sapphire substrates using ion-beam reactive sputtering. Films have been analyzed using x-ray diffraction, transmission electron microscopy, and atomic force microsc...