1,441 Result(s)
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Chapter
Hf-Based High-k Gate Dielectric Processing
This chapter focuses on the processing of Hf-based high-k gate dielectric film and its device fabrication to improve its electrical properties. First, the formation process of Hf-based high-k dielectric thin f...
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Chapter
Crystalline Oxides on Silicon
The ability to integrate crystalline metal oxide dielectric layers into silicon structures can open the way for a variety of novel applications which enhances the functionality and flexibility, ranging from hi...
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Chapter
V FB /V TH Anomaly in High-k Gate Stacks
One of the biggest challenges of metal/high-k gate stack technology is controlling the threshold voltage (V TH ) because achieving a high performance CMOS is almost im...
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Chapter
Reliability Implications of Fast and Slow Degradation Processes in High-k Gate Stacks
Aggressive transistor scaling to achieve better chip functionality is driving the introduction of high-k dielectric materials into traditional device gate stacks. These advanced gate stacks are multilayer stru...
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Chapter
Introduction to High-k Gate Stacks
The manifold aim of this chapter is: (1) to present a simple summary of the contents of the eleven other chapters of the book in a manner as continuous and cohesive as possible; (2) more importantly, to provid...
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Chapter
Hafnium-Based Gate Dielectric Materials
In this chapter, we focus on hafnium-based gate dielectrics. HfO2 is regarded as the most promising material for the high–k gate dielectrics owing to its large dielectric constant and large band-gap energy. In th...
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Ternary HfO2 and La2O3 Based High-k Gate Dielectric Films for Advanced CMOS Applications
We first discuss HfO2-based ternary high-k dielectric films. We emphasize that ternary materials do not only exhibit average properties expected by the mean-media model, but that they also reveal unexpected prope...
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Chapter
Metal Gate Electrodes
Metal gate electrodes are a vital enabler for the use of high-k gate dielectrics in advanced complimentary metal oxide semiconductor (CMOS) technology. This chapter will detail how metal gate electrodes were s...
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Chapter
High Mobility Channels
The need for high-κ gate dielectrics and metal gates for advanced integrated circuits has re-opened the door to germanium and III–V compounds as potential replacements for silicon channels, offering the possib...
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Chapter
Channel Mobility
Effective channel mobility, μeff, of high-k gate dielectrics in various device technologies is discussed in detail. Initially, the background on mobility is provided with brief explanations on different scatterin...
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Chapter
Lanthanide-Based High-k Gate Dielectric Materials
This chapter covers selected issues related to lanthanides (or lanthanoids) used in oxide gate dielectrics. In general, lanthanides offer key material property advantages for gate dielectric applications. Thes...
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Chapter
MOSFET: Basics, Characteristics, and Characterization
This chapter attempts to provide a theoretical basis for the Metal Oxide (Insulator) Semiconductor (MOS/MIS) Structure and the MOS/MIS Field Effect Transistor (MOSFET/MISFET), their characteristics, and their ...
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Chapter
Electrical Stability (Read and Write Operations)
In SRAM, read and write are fundamental operations. To ensure the correct operations, the stability analysis is indispensable. In this chapter, electrical stability analysis is explained. In Sect. 3.1, the SRA...
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Chapter
Low-Power Array Design Techniques
This chapter introduces circuit technologies that enhance electric stability of the cell, the latest technologies that provide moderate timing generation, as well as larger cell stability. In Sect. 5.1, the vo...
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Chapter
Future Technologies
The design solution described in Chap. 5 will help the minimum operating voltage (VDDmin) of a general 6T single-port SRAM. However, it will eventually face the limitation of the SRAM VDDmin because of the degrad...
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Chapter
Fundamentals of SRAM Memory Cell
This chapter introduces fundamentals of SRAM memory cell. The basic SRAM cell design and the operation are also described in this chapter. In Sect.2.1, the most common SRAM cell, the full CMOS 6-T memory cell,...
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Chapter
Low Power Memory Cell Design Technique
This chapter describes the low power memory cell design technique. Section 4.1 introduces fundamentals of leakage of SRAM array. In Sect. 4.2, source line voltage control techniques are explained as new design...
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Chapter
Reliable Memory Cell Design for Environmental Radiation-Induced Failures in SRAM
In this chapter, current status of environmental radiation-induced failures in SRAM is introduced. Alpha ray-induced soft-error has been a major concern for soft-errors in memories until late 1980s. Threat fro...
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Chapter
Introduction
Static random access memory (SRAM) has been widely used as the representative memory for logic LSIs. This is because SRAM array operates fast as logic circuits operate, and consumes a little power at standby m...
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Chapter
Special Considerations for Clay-Based Materials
The main contribution of this chapter is to show special considerations applicable to clay nanocomposites. Clay nanocomposites, which comprise clays of nano-scale dimension dispersed in polymer materials, have...