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  1. No Access

    Chapter

    Hf-Based High-k Gate Dielectric Processing

    This chapter focuses on the processing of Hf-based high-k gate dielectric film and its device fabrication to improve its electrical properties. First, the formation process of Hf-based high-k dielectric thin f...

    Masaaki Niwa in High Permittivity Gate Dielectric Materials (2013)

  2. No Access

    Chapter

    Crystalline Oxides on Silicon

    The ability to integrate crystalline metal oxide dielectric layers into silicon structures can open the way for a variety of novel applications which enhances the functionality and flexibility, ranging from hi...

    H. Jörg Osten in High Permittivity Gate Dielectric Materials (2013)

  3. No Access

    Chapter

    V FB /V TH Anomaly in High-k Gate Stacks

    One of the biggest challenges of metal/high-k gate stack technology is controlling the threshold voltage (V TH ) because achieving a high performance CMOS is almost im...

    Akira Toriumi, Toshihide Nabatame in High Permittivity Gate Dielectric Materials (2013)

  4. No Access

    Chapter

    Reliability Implications of Fast and Slow Degradation Processes in High-k Gate Stacks

    Aggressive transistor scaling to achieve better chip functionality is driving the introduction of high-k dielectric materials into traditional device gate stacks. These advanced gate stacks are multilayer stru...

    Gennadi Bersuker in High Permittivity Gate Dielectric Materials (2013)

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    Chapter

    Introduction to High-k Gate Stacks

    The manifold aim of this chapter is: (1) to present a simple summary of the contents of the eleven other chapters of the book in a manner as continuous and cohesive as possible; (2) more importantly, to provid...

    Samares Kar in High Permittivity Gate Dielectric Materials (2013)

  6. No Access

    Chapter

    Hafnium-Based Gate Dielectric Materials

    In this chapter, we focus on hafnium-based gate dielectrics. HfO2 is regarded as the most promising material for the high–k gate dielectrics owing to its large dielectric constant and large band-gap energy. In th...

    Akira Nishiyama in High Permittivity Gate Dielectric Materials (2013)

  7. No Access

    Chapter

    Ternary HfO2 and La2O3 Based High-k Gate Dielectric Films for Advanced CMOS Applications

    We first discuss HfO2-based ternary high-k dielectric films. We emphasize that ternary materials do not only exhibit average properties expected by the mean-media model, but that they also reveal unexpected prope...

    Akira Toriumi, Koji Kita in High Permittivity Gate Dielectric Materials (2013)

  8. No Access

    Chapter

    Metal Gate Electrodes

    Metal gate electrodes are a vital enabler for the use of high-k gate dielectrics in advanced complimentary metal oxide semiconductor (CMOS) technology. This chapter will detail how metal gate electrodes were s...

    Jamie K. Schaeffer in High Permittivity Gate Dielectric Materials (2013)

  9. No Access

    Chapter

    High Mobility Channels

    The need for high-κ gate dielectrics and metal gates for advanced integrated circuits has re-opened the door to germanium and III–V compounds as potential replacements for silicon channels, offering the possib...

    Michel Houssa, Peide Ye, Marc Heyns in High Permittivity Gate Dielectric Materials (2013)

  10. No Access

    Chapter

    Channel Mobility

    Effective channel mobility, μeff, of high-k gate dielectrics in various device technologies is discussed in detail. Initially, the background on mobility is provided with brief explanations on different scatterin...

    Chadwin Young in High Permittivity Gate Dielectric Materials (2013)

  11. No Access

    Chapter

    Lanthanide-Based High-k Gate Dielectric Materials

    This chapter covers selected issues related to lanthanides (or lanthanoids) used in oxide gate dielectrics. In general, lanthanides offer key material property advantages for gate dielectric applications. Thes...

    Daniel J. Lichtenwalner in High Permittivity Gate Dielectric Materials (2013)

  12. No Access

    Chapter

    MOSFET: Basics, Characteristics, and Characterization

    This chapter attempts to provide a theoretical basis for the Metal Oxide (Insulator) Semiconductor (MOS/MIS) Structure and the MOS/MIS Field Effect Transistor (MOSFET/MISFET), their characteristics, and their ...

    Samares Kar in High Permittivity Gate Dielectric Materials (2013)

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    Chapter

    Electrical Stability (Read and Write Operations)

    In SRAM, read and write are fundamental operations. To ensure the correct operations, the stability analysis is indispensable. In this chapter, electrical stability analysis is explained. In Sect. 3.1, the SRA...

    Masanao Yamaoka, Yasumasa Tsukamoto in Low Power and Reliable SRAM Memory Cell an… (2011)

  14. No Access

    Chapter

    Low-Power Array Design Techniques

    This chapter introduces circuit technologies that enhance electric stability of the cell, the latest technologies that provide moderate timing generation, as well as larger cell stability. In Sect. 5.1, the vo...

    Koji Nii, Masanao Yamaoka, Kenichi Osada in Low Power and Reliable SRAM Memory Cell an… (2011)

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    Chapter

    Future Technologies

    The design solution described in Chap. 5 will help the minimum operating voltage (VDDmin) of a general 6T single-port SRAM. However, it will eventually face the limitation of the SRAM VDDmin because of the degrad...

    Koji Nii, Masanao Yamaoka in Low Power and Reliable SRAM Memory Cell and Array Design (2011)

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    Chapter

    Fundamentals of SRAM Memory Cell

    This chapter introduces fundamentals of SRAM memory cell. The basic SRAM cell design and the operation are also described in this chapter. In Sect.2.1, the most common SRAM cell, the full CMOS 6-T memory cell,...

    Kenichi Osada in Low Power and Reliable SRAM Memory Cell and Array Design (2011)

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    Chapter

    Low Power Memory Cell Design Technique

    This chapter describes the low power memory cell design technique. Section 4.1 introduces fundamentals of leakage of SRAM array. In Sect. 4.2, source line voltage control techniques are explained as new design...

    Kenichi Osada, Masanao Yamaoka in Low Power and Reliable SRAM Memory Cell and Array Design (2011)

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    Chapter

    Reliable Memory Cell Design for Environmental Radiation-Induced Failures in SRAM

    In this chapter, current status of environmental radiation-induced failures in SRAM is introduced. Alpha ray-induced soft-error has been a major concern for soft-errors in memories until late 1980s. Threat fro...

    Eishi Ibe, Kenichi Osada in Low Power and Reliable SRAM Memory Cell and Array Design (2011)

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    Chapter

    Introduction

    Static random access memory (SRAM) has been widely used as the representative memory for logic LSIs. This is because SRAM array operates fast as logic circuits operate, and consumes a little power at standby m...

    Koichiro Ishibashi in Low Power and Reliable SRAM Memory Cell and Array Design (2011)

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    Chapter

    Special Considerations for Clay-Based Materials

    The main contribution of this chapter is to show special considerations applicable to clay nanocomposites. Clay nanocomposites, which comprise clays of nano-scale dimension dispersed in polymer materials, have...

    Takahiro Imai in Dielectric Polymer Nanocomposites (2010)

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