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  1. No Access

    Article

    Implantation and Activation of High Concentrations of Boron and Phosphorus in Germanium

    The effect of increasing boron or phosphorus implant dose (i.e., 5×1013-5×1016 cm−2) and subsequent annealing (400-600°C for 3 hrs in N2) on the activation, diffusion and structure of germanium is studied in this...

    Yong Seok Suh, M. S. Carroll, R. A. Levy, G. Bisognin… in MRS Online Proceedings Library (2006)

  2. No Access

    Article

    Clustering Analysis in Boron and Phosphorus Implanted (100) Germanium by X-Ray Absorption Spectroscopy

    Recently, germanium based semiconductor device technology gained renewed interest due to new developments such as the use of high-k dielectrics for high mobility Ge MOSFETS. However, a systematic local structural...

    M. Alper Sahiner, Parviz Ansari, Malcolm S. Carroll… in MRS Online Proceedings Library (2005)

  3. No Access

    Article

    Phosphorus and Boron Implantation into (100) Germanium

    Boron and phosphorus were implanted into (100) Ge with energies ranging from 20-320 keV and doses of 5×1013 to 5×1016 cm−2. The as-implanted and annealed dopant profiles were examined using secondary ion mass spe...

    Y. S. Suh, M. S. Carroll, R. A. Levy, A. Sahiner… in MRS Online Proceedings Library (2003)

  4. No Access

    Article

    Investigation of CF3I as an Environmentally Benign Dielectric Etchant

    In this study, trifluoroiodomethane (CF3I), a non-global-warming gas, has been investigated as a substitute for typical PFC’s currently used in wafer patterning and CVD chamber cleaning processes. Dielectric film...

    R. A. Levy, V. B. Zaitsev, K. Aryusook, C. Ravindranath… in Journal of Materials Research (1998)

  5. No Access

    Article

    Deposition of Ti(C,N) Thick Films by ILPCVD Starting from TDMAT

    Ti(C,N) films have been deposited from tetrakis(dimethylamido)titanium (TDMAT) and ammonia by CVD at low pressure using pulsed Injection technique (ILPCVD). This procedure allows us to easily deposit Ti(C,N) f...

    S. Gilles, N. Bourhila, J. P. Senateur, R. Madar… in MRS Online Proceedings Library (1997)

  6. No Access

    Article

    Evaluation of LPCVD Boron Nitride as a Low Dielectric Constant Material

    This study characterizes low pressure chemically vapor deposited B-N-C-H as a low dielectric constant material for interlevel dielectric applications. These films are synthesized over a temperature range of 40...

    R. A. Levy, M. Narayan, M. Z. Karim, S. T. Hsu in MRS Online Proceedings Library (1996)

  7. No Access

    Article

    Microporous SiO2/Vycor membranes for gas separation

    In this study, porous Vycor tubes with 40 Å initial pore diameter were modified using low pressure chemical vapor deposition (LPCVD) of SiO2. Diethylsilane (DES) in conjunction with O2 or N2O were used as precurs...

    R. A. Levy, E. S. Ramos, L. N. Krasnoperov, A. Datta… in Journal of Materials Research (1996)

  8. No Access

    Article

    Low pressure chemical vapor deposition of silicon nitride using the environmentally friendly tris(dimethylamino)silane precursor

    This study investigates the use of the environmentally benign precursor tri(dimethylamino)silane (TDMAS) with NH3 to synthesize silicon nitride films by low pressure chemical vapor deposition. The growth kinetics...

    R. A. Levy, X. Lin, J. M. Grow, H. J. Boeglin, R. Shalvoy in Journal of Materials Research (1996)

  9. No Access

    Article

    Low pressure chemical vapor deposition of B-N-C-H films from triethylamine borane complex

    In this study, films consisting of B-N-C-H have been synthesized by low pressure chemical vapor deposition using the liquid precursor triethylamine borane complex (TEAB) both with and without ammonia. When no NH3

    R. A. Levy, E. Mastromatteo, J. M. Grow, V. Paturi… in Journal of Materials Research (1995)

  10. No Access

    Article

    Plasma Enhanced Chemical Vapor Deposition of Silicon Nitride from Novel Organosilanes

    The environmentally benign precursors diethylsilane and di-t-butylsilane were used with NH3 to synthesize silicon nitride films by plasma enhanced chemical vapor deposition. The growth kinetics and film propertie...

    J. M. Grow, R. A. Levy, Y. Yu, K. T. Shih in MRS Online Proceedings Library (1994)

  11. No Access

    Article

    Micromechanical characterization of chemically vapor deposited ceramic films

    In this study, nanoindentation is used to determine Young’s modulus of chemically vapor deposited films consisting of silicon carbide, silicon nitride, boron carbide, boron nitride, and silicon dioxide. Diethy...

    J. M. Grow, R. A. Levy in Journal of Materials Research (1994)

  12. No Access

    Article

    Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications

    This paper reviews the current status of LPCVD tungsten and aluminum for VLSI applications. Using deposition chemistries based on tungsten hexafluoride and tri-isobutyl aluminum, W and Al deposits are characte...

    R. A. Levy, M. L. Green in MRS Online Proceedings Library (1986)