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Article
Low pressure chemical vapor deposition of silicon nitride using the environmentally friendly tris(dimethylamino)silane precursor
This study investigates the use of the environmentally benign precursor tri(dimethylamino)silane (TDMAS) with NH3 to synthesize silicon nitride films by low pressure chemical vapor deposition. The growth kinetics...
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Article
Low pressure chemical vapor deposition of B-N-C-H films from triethylamine borane complex
In this study, films consisting of B-N-C-H have been synthesized by low pressure chemical vapor deposition using the liquid precursor triethylamine borane complex (TEAB) both with and without ammonia. When no NH3