23 Result(s)

Article

High Throughput Screening Tools for Thermoelectric Materials

A suite of complementary high-throughput screening systems for combinatorial films was developed at National Institute of Standards and Technology to facilitate the search for efficient thermoelectric material...

W. Wong-Ng, Y. Yan, M. Otani, J. Martin, K. R. Talley… in Journal of Electronic Materials (2015)

Article

Relationship between Interfacial Roughness and Dielectric Reliability for Silicon Oxynitride Gate Dielectrics Processed with Nitric Oxide

The greatest benefits of nitrogen incorporation into gate dielectrics may be obtained by placing nitrogen preferentially at the interfacial regions of the dielectric film. One method of distributing nitrogen i...

J. Sapjeta, M. L. Green, J. P. Chang, P. J. Silverman… in MRS Online Proceedings Library (1999)

Article

Soft Breakdown in Ultra-Thin Oxides

An understanding of dielectric breakdown mechanisms is critical for continued oxide scaling. Although working transistors have been demonstrated with sub-2nm SiO₂ gate dielectrics, the manufacturability of such d...

B. E. Weir, P. J. Silverman, G. B. Alers, D. Monroe… in MRS Online Proceedings Library (1999)

Chapter

Thermal Routes to Ultrathin Oxynitrides

Ultrathin (< 6 nm)silicon oxynitrides are desirable as gate dielectrics for present and future ultra-large-scale-integrated (ULSI) circuits due to their improved reliability [1-3] and boron penetration resistance...

M. L. Green, D. Brasen, L. C. Feldman… in Fundamental Aspects of Ultrathin Dielectri… (1998)

Chapter

Medium Energy Ion Scattering Studies of Silicon Oxidation and Oxynitridation

The paper reviews some of our recent high resolution medium energy ion scattering (MEIS) experiments on mechanistic and structural aspects of ultrathin (<5 nm) dielectric films (oxides, SiO₂, and oxynitrides, SiO...

E. Garfunkel, E. P. Gusev, H. C. Lu… in Fundamental Aspects of Ultrathin Dielectri… (1998)

Chapter

Magnetic Measurements of the 5 Meter QC Series Quadrupoles at Lawrence Berkeley Laboratory

From May 1991 to September 1992, magnetic measurements were performed on six 5 meter prototype SSC quadrupoles designed and built at Lawrence Berkeley Laboratory (LBL). In addition, one of the quadrupoles was ...

Paul Barale, B. Benjegerdes, S. Caspi, M.L Green, A. Lietzke… in Supercollider 5 (1994)

Article

In-Situ Processing of Si Film Structures in a Rapid Thermal Chemical Vapor Deposition Reactor

Although the benefits of in-situ processing seem intuitively obvious as higher yield due to particle and contamination control, there is presently little data to support these claims. However, materials charac...

M. L. Green, D. Brasen, H. Luftman, T. Boone, K. Krisch in MRS Online Proceedings Library (1993)

Article

Preparation of poly(ethylene glycol)-grafted alumina

M. L. Green, W. E. Rhine, P. Calvert, H. K. Bowen in Journal of Materials Science Letters (1993)

Article

Boron Diffusion in Si_1-x Ge_x Strained Layers

Boron diffusion in Si_a7 Ge_a3 strained layers has been studied as a function of annealing temperature and is compared to boron diffusion in unstrained Si epitaxial layers. A lower diffusivity was observed in Si_a7 ...

N. Moriya, C. A. King, L. C. Feldman, H. S. Luftman… in MRS Online Proceedings Library (1992)

Article

Strain-Free Ge_xSi_1−x Layers with Low Threading Dislocation Densities Grown on Si Substrates

We have grown linearly compositionally graded Ge_xSi_1−x structures at high temperatures (700–900°C) on Si substrates to form a surface which resembles a Ge_xSi_1−x substrate. We have obtained completely relaxed stru...

E. A. Fitzgerald, Y. H. **e, M. L. Green, D. Brasen… in MRS Online Proceedings Library (1991)

Article

Oxygen and carbon incorporation in low temperature epitaxial Si films grown by rapid thermal chemical vapor deposition (RTCVD)

Using SIMS analysis, we have measured oxygen and carbon concentrations in epitaxial Si films grown between 550 and 900° C. The films were grown by rapid thermal chemical vapor deposition from SiH₄ as well as seve...

M. L. Green, D. Brasen, M. Geva, W. Reents, F. Stevie… in Journal of Electronic Materials (1990)

Article

Elimination of dislocations in heteroepitaxial MBE and RTCVD Ge _x Si_1-x grown on patterned Si substrates

We have grown Ge _x Si_1-x (0 <x < 0.20,1000–3000Å thick) on small growth areas etched in the Si substrate. Layers were grown using both molecular beam epi...

E. A. Fitzgerald, Y. -H. **e, D. Brasen, M. L. Green… in Journal of Electronic Materials (1990)

Chapter and Conference Paper

Magnetization Hysteresis in the Bi(Pb)SrCaCuO Superconducting System

Magnetization hysteresis of polycrystalline Bi(Pb)SrCaCuO samples was measured over a wide temperature range at applied fields up to 9 T using vibrating sample magnetometry (VSM). The irreversibility (△M) was ...

M. L. Green, K. Nakatani, T. Hasegawa, K. Kishio… in Advances in Superconductivity II (1990)

Article

High Quality Si and Si_1−xGe_x Films and Heterojunction Bipolar Transistors Grown by Rapid Thermal Chemical Vapor Deposition (Rtcvd)

Rapid thermal chemical vapor deposition (RTCVD) is a processing technique that results from the combination of radiant heating lamps and a CVD chamber. It is the ultimate cold-wall CVD reactor and allows one t...

M. L. Green, D. Brasen, H. Temkin, V. C. Kannan… in MRS Online Proceedings Library (1989)

Article

Electrical Properties of Si/SiGe Structures Grown by Low Temperature Epitaxy

Si/SiGe heterostructures offer improved performance for many electronic and optoelectronic Si devices. The expected improvement in device characteristics depends critically on the structural perfection and pre...

H. Temkin, M. L. Green, D. Brasen, J. C. Bean in MRS Online Proceedings Library (1989)

Article

Deposition, post-deposition annealing, and characterization of epitaxial Ge films grown on Si(100) by pyrolysis of GeH₄

As a first step towards develo** heterostructures such as GaAs/Ge/Si entirely by chemical vapor deposition, Ge films have been deposited on (100) Si by the pyrolysis of GeH₄. The best films are grown at 700° C ...

M. L. Green, Y. S. Ali, D. Brasen, S. Nakahara in Journal of Electronic Materials (1988)

Article

Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications

This paper reviews the current status of LPCVD tungsten and aluminum for VLSI applications. Using deposition chemistries based on tungsten hexafluoride and tri-isobutyl aluminum, W and Al deposits are characte...

R. A. Levy, M. L. Green in MRS Online Proceedings Library (1986)

Article

The Effects of Dopants and Crystal Perfection on the Chemical Vapor Deposition of Tungsten on Silicon by Silicon Reduction of Tungsten Hexafluoride

The use of CVD W as a diffusion barrier between Al and Si is becoming widespread. The initial stage of the deposition involves the Si reduction of WF₆ according to the following reaction:

M. L. Green, Y. S. Ali, B. A. Davidson, L. C. Feldman… in MRS Online Proceedings Library (1985)

Article

Chemical Vapor Deposition of Metals for Integrated Circuit Applications

Chemical vapor deposition has been used to deposit films and purify metals since about the turn of the century. Whereas CVD technology was adopted very early by the integrated circuit industry for the depositi...

M. L. Green, R. A. Levy in JOM (1985)

Article

Quadrics of rank four in the ideal of a canonical curve

M. L. Green in Inventiones mathematicae (1984)