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    Article

    Clustering Analysis in Boron and Phosphorus Implanted (100) Germanium by X-Ray Absorption Spectroscopy

    Recently, germanium based semiconductor device technology gained renewed interest due to new developments such as the use of high-k dielectrics for high mobility Ge MOSFETS. However, a systematic local structural...

    M. Alper Sahiner, Parviz Ansari, Malcolm S. Carroll… in MRS Online Proceedings Library (2005)

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    Article

    Xafs as a Direct Local Structural Probe in Revealing the Effects of C Presence in B Diffusion in Sige Layers

    The local structural information around the germanium atom in boron doped SiGe alloys is important in understanding the dopant diffusion mechanisms. Epitaxial SiGe test structures with B and C markers were gro...

    M. Alper Sahiner, Parviz Ansari, Malcolm S. Carroll… in MRS Online Proceedings Library (2003)