Skip to main content

and
  1. Article

    Open Access

    Publisher Correction: A silicon singlet–triplet qubit driven by spin-valley coupling

    Ryan M. Jock, N. Tobias Jacobson, Martin Rudolph, Daniel R. Ward in Nature Communications (2022)

  2. Article

    Open Access

    Publisher Correction: A silicon singlet–triplet qubit driven by spin-valley coupling

    Ryan M. Jock, N. Tobias Jacobson, Martin Rudolph, Daniel R. Ward in Nature Communications (2022)

  3. Article

    Open Access

    A silicon singlet–triplet qubit driven by spin-valley coupling

    Spin–orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromag...

    Ryan M. Jock, N. Tobias Jacobson, Martin Rudolph, Daniel R. Ward in Nature Communications (2022)

  4. Article

    Open Access

    A silicon metal-oxide-semiconductor electron spin-orbit qubit

    The silicon metal-oxide-semiconductor (MOS) material system is a technologically important implementation of spin-based quantum information processing. However, the MOS interface is imperfect leading to concer...

    Ryan M. Jock, N. Tobias Jacobson, Patrick Harvey-Collard in Nature Communications (2018)

  5. Article

    Open Access

    Coherent coupling between a quantum dot and a donor in silicon

    Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges...

    Patrick Harvey-Collard, N. Tobias Jacobson, Martin Rudolph in Nature Communications (2017)

  6. No Access

    Article

    Minority Carrier Lifetime Measurement in Germanium on Silicon Heterostructures for Optoelectronic Applications

    Demand for low cost and high density near infrared (NIR) detection has motivated the development and use of germanium on silicon (Ge/Si) heterostructures to extend the optoelectronic application of Si technolo...

    Josephine J. Sheng, Malcolm. S. Carroll in MRS Online Proceedings Library (2006)

  7. No Access

    Article

    Clustering Analysis in Boron and Phosphorus Implanted (100) Germanium by X-Ray Absorption Spectroscopy

    Recently, germanium based semiconductor device technology gained renewed interest due to new developments such as the use of high-k dielectrics for high mobility Ge MOSFETS. However, a systematic local structural...

    M. Alper Sahiner, Parviz Ansari, Malcolm S. Carroll in MRS Online Proceedings Library (2005)

  8. No Access

    Article

    Xafs as a Direct Local Structural Probe in Revealing the Effects of C Presence in B Diffusion in Sige Layers

    The local structural information around the germanium atom in boron doped SiGe alloys is important in understanding the dopant diffusion mechanisms. Epitaxial SiGe test structures with B and C markers were gro...

    M. Alper Sahiner, Parviz Ansari, Malcolm S. Carroll in MRS Online Proceedings Library (2003)

  9. No Access

    Article

    Dynamical Behavior of the Multibondic and Multicanonic Algorithm In The 3D q-State Potts Model

    We investigate the dynamical behavior of the recently proposed multibondic cluster Monte Carlo algorithm in applications to the three-dimensional q-state Potts models with q= 3, 4, and 5 in the vicinity of their ...

    Malcolm S. Carroll, Wolfhard Janke, Stefan Kappler in Journal of Statistical Physics (1998)