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  1. No Access

    Chapter

    Characterization of Local Structures in Plasma Deposited Semiconductors by X-ray Absorption Spectroscopy

    Extended X-ray-Absorption Fine-Structure Spectroscopy (EXAFS) has been used to investigate the subtle local structural variations in plasma deposited semiconductors. Grazing incidence geometry EXAFS is a very ...

    M. Alper Sahiner in Complex Plasmas (2014)

  2. No Access

    Article

    The Local Structure of Antimony in High Dose Antimony Implants in Silicon by XAFS and SIMS.

    One of the important challenges in semiconductor industry is to sustain high concentration of dopant atoms electrically active in very small areas. In investigating the optimum post implantation treatment meth...

    M. Alper Sahiner, Steven W. Novak, Joe C. Woicik… in MRS Online Proceedings Library (2011)

  3. No Access

    Article

    Non-routine Dopant, Impurity and Stoichiometry Characterization of SiGe, SiON and Ultra-low Energy B-implanted Si Using Secondary Ion Mass Spectrometry

    New, non-routine metrology issues are addressed for three kinds of materials and processes that are necessary for the fabrication of ultra-high speed devices. We look at the problems and solutions for measurin...

    Charles W. Magee, Temel H. Buyuklimanli, John W. Marino… in MRS Online Proceedings Library (2011)

  4. No Access

    Article

    Local Crystal Structure Modifications in Pulsed Laser Deposited Colossal Magnetoresistive Oxide Thin Films

    The local structure around the manganese atom is probed by extended x-ray absorption spectroscopy (EXAFS) measurements in pulsed laser deposited thin films of La1–xCaxMnO3 (x=0.12–0.53). The thin films were depos...

    M. Alper Sahiner, Wiqar Shah, Marc Aranguren… in MRS Online Proceedings Library (2009)

  5. No Access

    Article

    Clustering Analysis in Boron and Phosphorus Implanted (100) Germanium by X-Ray Absorption Spectroscopy

    Recently, germanium based semiconductor device technology gained renewed interest due to new developments such as the use of high-k dielectrics for high mobility Ge MOSFETS. However, a systematic local structural...

    M. Alper Sahiner, Parviz Ansari, Malcolm S. Carroll… in MRS Online Proceedings Library (2005)

  6. No Access

    Article

    The Role Of Ge In Cluster Formation In B And Bf2 Implanted Si Wafers After Ge Pre-Amorphization

    Cluster formation in high dose B, BF2 implanted Si wafers is an important problem in silicon do**, since it is one of the leading causes of the electrical deactivation of the dopant. In this study, we used Ge p...

    M. Alper Sahiner, Charles W. Magee, Daniel F. Downey… in MRS Online Proceedings Library (2003)

  7. No Access

    Article

    Xafs as a Direct Local Structural Probe in Revealing the Effects of C Presence in B Diffusion in Sige Layers

    The local structural information around the germanium atom in boron doped SiGe alloys is important in understanding the dopant diffusion mechanisms. Epitaxial SiGe test structures with B and C markers were gro...

    M. Alper Sahiner, Parviz Ansari, Malcolm S. Carroll… in MRS Online Proceedings Library (2003)