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  1. No Access

    Article

    Low pressure chemical vapor deposition of silicon nitride using the environmentally friendly tris(dimethylamino)silane precursor

    This study investigates the use of the environmentally benign precursor tri(dimethylamino)silane (TDMAS) with NH3 to synthesize silicon nitride films by low pressure chemical vapor deposition. The growth kinetics...

    R. A. Levy, X. Lin, J. M. Grow, H. J. Boeglin, R. Shalvoy in Journal of Materials Research (1996)

  2. No Access

    Article

    Low pressure chemical vapor deposition of B-N-C-H films from triethylamine borane complex

    In this study, films consisting of B-N-C-H have been synthesized by low pressure chemical vapor deposition using the liquid precursor triethylamine borane complex (TEAB) both with and without ammonia. When no NH3

    R. A. Levy, E. Mastromatteo, J. M. Grow, V. Paturi… in Journal of Materials Research (1995)