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    Evaluation of LPCVD Boron Nitride as a Low Dielectric Constant Material

    This study characterizes low pressure chemically vapor deposited B-N-C-H as a low dielectric constant material for interlevel dielectric applications. These films are synthesized over a temperature range of 40...

    R. A. Levy, M. Narayan, M. Z. Karim, S. T. Hsu in MRS Online Proceedings Library (1996)