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  1. No Access

    Article

    Low Bias Dry Etching of Sic and Sicn in ICP NF3 Discharges

    A parametric study of the etching characteristics of 6H p+ and n+ SiC and thin film SiC0.8N0.2 in Inductively Coupled Plasma NF3/O2 and NF3/Ar discharges has been performed. The etch rates in both chemistries inc...

    J. J. Wang, Hyun Cho, E. S. Lambers, S. J. Pearton… in MRS Online Proceedings Library (1998)

  2. No Access

    Article

    The effect of liquid gallium on the strengths of stainless steel and thermoplastics

    We have investigated the effect of liquid gallium on type 316L stainless steel (as a candidate for the P–V–T pressure vessel), and four thermoplastics: two semicrystalline (high-density polyethylene and polypr...

    K. A Narh, V. P Dwivedi, J. M Grow, A Stana, W.-Y Shih in Journal of Materials Science (1998)

  3. No Access

    Article

    ICP Etching of SiC

    A number of different plasma chemistries, including NF3/O2, SF6/O2, SF6/Ar, ICI, IBr, Cl2/Ar, BCl3/Ar and CH4/H2/Ar, have been investigated for dry etching of 6H and 3C-SiC in a Inductively Coupled Plasma tool. R...

    J. J. Wang, E. S. Lambers, S. J. Pearton, M. Ostling… in MRS Online Proceedings Library (1997)

  4. No Access

    Article

    Hydrogen passivation in n- and p-type 6H-SiC

    Hydrogen passivation effects are found to be much more prevalent in p-type 6H-SiC relative to n-type material. Reactivation of passivated B acceptors occurs at ~700°C, corresponding to a reactivation energy of...

    F. Ren, J. M. Grow, M. Bhaskaran, R. G. Wilson… in Journal of Electronic Materials (1997)

  5. No Access

    Article

    Electron Cyclotron Resonance Etching of SiC in SF6/O2 And NF3/O2 Plasmas

    Etching of β-SiC with electron cyclotron resonance (ECR) system was investigated. Anisotropic and smooth etching of SiC was demonstrated with SF6/O2 based discharges. The root-mean-square roughness increases from...

    F. Ren, J. M. Grow, M. Bhaskaran, J. W. Lee… in MRS Online Proceedings Library (1996)

  6. No Access

    Article

    Microporous SiO2/Vycor membranes for gas separation

    In this study, porous Vycor tubes with 40 Å initial pore diameter were modified using low pressure chemical vapor deposition (LPCVD) of SiO2. Diethylsilane (DES) in conjunction with O2 or N2O were used as precurs...

    R. A. Levy, E. S. Ramos, L. N. Krasnoperov, A. Datta… in Journal of Materials Research (1996)

  7. No Access

    Article

    Low pressure chemical vapor deposition of silicon nitride using the environmentally friendly tris(dimethylamino)silane precursor

    This study investigates the use of the environmentally benign precursor tri(dimethylamino)silane (TDMAS) with NH3 to synthesize silicon nitride films by low pressure chemical vapor deposition. The growth kinetics...

    R. A. Levy, X. Lin, J. M. Grow, H. J. Boeglin, R. Shalvoy in Journal of Materials Research (1996)

  8. No Access

    Article

    Low pressure chemical vapor deposition of B-N-C-H films from triethylamine borane complex

    In this study, films consisting of B-N-C-H have been synthesized by low pressure chemical vapor deposition using the liquid precursor triethylamine borane complex (TEAB) both with and without ammonia. When no NH3

    R. A. Levy, E. Mastromatteo, J. M. Grow, V. Paturi… in Journal of Materials Research (1995)

  9. No Access

    Article

    Optical Properties of Thermally Oxidized Silicon

    The effect of furnace grown SiO2 layers on the optical properties of p- on p+ (100) Si substrates are investigated. The real part, n, of the complex refractive index n* = n + ik is calculated for radiation measur...

    O. L. Russo, N. M. Ravindra, J. M. Grow, K. A. Dumas in MRS Online Proceedings Library (1994)

  10. No Access

    Article

    Plasma Enhanced Chemical Vapor Deposition of Silicon Nitride from Novel Organosilanes

    The environmentally benign precursors diethylsilane and di-t-butylsilane were used with NH3 to synthesize silicon nitride films by plasma enhanced chemical vapor deposition. The growth kinetics and film propertie...

    J. M. Grow, R. A. Levy, Y. Yu, K. T. Shih in MRS Online Proceedings Library (1994)

  11. No Access

    Article

    Micromechanical characterization of chemically vapor deposited ceramic films

    In this study, nanoindentation is used to determine Young’s modulus of chemically vapor deposited films consisting of silicon carbide, silicon nitride, boron carbide, boron nitride, and silicon dioxide. Diethy...

    J. M. Grow, R. A. Levy in Journal of Materials Research (1994)

  12. No Access

    Chapter

    Low Temperature Synthesis and Characterization of Silicon Dioxide Films

    Diethylsilane (DES) has been used as a precursor to produce silicon dioxide films by low pressure chemical vapor deposition. These films were synthesized in the temperature range of 350° to 475° C with the gro...

    G. S. Chakravarthy, R. A. Levy, J. M. Grow… in The Physics and Chemistry of SiO2 and the … (1993)