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  1. Article

    Open Access

    Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures

    High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplifica...

    M. J. Curry, M. Rudolph, T. D. England, A. M. Mounce, R. M. Jock… in Scientific Reports (2019)

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  2. Article

    Open Access

    Long-term drift of Si-MOS quantum dots with intentional donor implants

    Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionall...

    M. Rudolph, B. Sarabi, R. Murray, M. S. Carroll, Neil M. Zimmerman in Scientific Reports (2019)

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  3. No Access

    Article

    Silicon Interstitial Driven Loss of Substitutional Carbon from SiGeC Structures

    The effect of annealing silicon capped pseudomorphic Si0.7865Ge0.21C0.0035 or Si0.998C0.002 layers on silicon substrates in nitrogen or oxygen at 850°C was examined using x-ray diffraction (XRD) and secondary ion...

    M. S. Carroll, J. C. Sturm, E. Napolitani, D. De Salvador… in MRS Online Proceedings Library (2011)

  4. No Access

    Article

    Boron Segregation and Electrical Properties in Polycrystalline SiGeC

    Previously, it has been reported that PMOS capacitors with heavily boron-doped polycrystalline SiGeC gates are less susceptible to boron penetration than those with poly Si gates [1]. Boron appears to accumula...

    E. J. Stewart, M. S. Carroll, J. C. Sturm in MRS Online Proceedings Library (2011)

  5. No Access

    Article

    Experimental Studies of Photoluminescence in Mn-Ion Implanted Silicon Rich Oxide Thin Film

    In this paper, we wish to report our preliminary experimental results from the photoluminescence (PL) studies in a Mn-ion implanted silicon-rich oxide (SRO) thin film. At 4 K, a broad PL peak, centered at ~ 1....

    Wei Pan, R. G. Dunn, M. S. Carroll, Y. Q. Wang in MRS Online Proceedings Library (2011)

  6. No Access

    Article

    Thermal Stability and Substitutional Carbon Incorporation far above Solid-Solubility in Si1-xCx and Si1-x-yGexCy Layers Grown by Chemical Vapor Deposition using Disilane

    Growth conditions for epitaxy of Si1-x-yGexCx and Si1-xCx alloy layers on (100) silicon substrates by rapid thermal chemical vapor deposition (RTCVD) with disilane as the silicon source gas are described and the ...

    M. S. Carroll, J. C. Sturm, E. Napolitani, D. De Salvador… in MRS Online Proceedings Library (2011)

  7. No Access

    Article

    Implantation and Activation of High Concentrations of Boron and Phosphorus in Germanium

    The effect of increasing boron or phosphorus implant dose (i.e., 5×1013-5×1016 cm−2) and subsequent annealing (400-600°C for 3 hrs in N2) on the activation, diffusion and structure of germanium is studied in this...

    Yong Seok Suh, M. S. Carroll, R. A. Levy, G. Bisognin… in MRS Online Proceedings Library (2006)

  8. No Access

    Article

    Phosphorus and Boron Implantation into (100) Germanium

    Boron and phosphorus were implanted into (100) Ge with energies ranging from 20-320 keV and doses of 5×1013 to 5×1016 cm−2. The as-implanted and annealed dopant profiles were examined using secondary ion mass spe...

    Y. S. Suh, M. S. Carroll, R. A. Levy, A. Sahiner… in MRS Online Proceedings Library (2003)

  9. No Access

    Article

    Boron Diffusion and Silicon Self-Interstitial Recycling between SiGeC layers

    Substitutional carbon is known to locally reduce silicon self-interstitial concentrations and act as a barrier to self-interstitial migration through the carbon rich regions. A silicon spacer between two carbo...

    M. S. Carroll, J. C. Sturm in MRS Online Proceedings Library (2003)

  10. No Access

    Article

    Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection

    In this work we investigate the diffusion and precipitation of supersaturated substitutional carbon in 200-nm-thick SiGeC layers buried under a silicon cap layer of 40 nm. The samples were annealed in either i...

    D. De Salvador, A. Coati, E. Napolitani, M. Berti, A.V. Drigo… in Applied Physics A (2002)

  11. No Access

    Article

    Quantitative Measurement of Interstitial Flux and Surface Super-saturation during Oxidation of Silicon

    During the oxidation of silicon, interstitials are generated at the oxidizing surface and diffuse into the silicon. Boron diffusion was used to map the local interstitial super-saturation, the ratio of interst...

    M. S. Carroll, J. C. Sturm in MRS Online Proceedings Library (2000)

  12. No Access

    Article

    Quantitative Measurement of Reduction of Phosphorus Diffusion by Substitutional Carbon Incorporation

    Complete suppression of transient enhanced boron diffusion (TED) and oxidation enhanced boron diffusion (OED) in silicon have been achieved using substitutional carbon to reduce the excess point defect concent...

    M. S. Carroll, J. C. Sturm, C. L. Chang in MRS Online Proceedings Library (1999)

  13. No Access

    Article

    Quantitative Measurement of Reduction of Boron Diffusion by Substitutional Carbon Incorporation

    Recently, the suppression of boron diffusion due to both thermal and transient enhanced diffusion (TED) has been demonstrated through the incorporation of 0.5% substitutional carbon in the base of Si/SiGe/Si h...

    M. S. Carroll, L. D. Lanzerotti, J. C. Sturm in MRS Online Proceedings Library (1998)

  14. No Access

    Article

    Novel Applications of Rapid Thermal Chemical Vapor Deposition for Nanoscale MOSFET’s

    In this paper we examine several applications of Rapid Thermal Chemical Vapor Deposition (RTCVD) for the fabrication of sub-100 rum MOSFET’s. Vertical dual-gated MOSFET’s are used as a test vehicle to implemen...

    J. C. Sturm, M. Yang, C. L. Chang, M. S. Carroll in MRS Online Proceedings Library (1998)

  15. No Access

    Chapter and Conference Paper

    Observation of Quasidiffusive Phonon Propagation in Silicon

    Photoexcitation of Si is expected to produce a broad range of phonon frequencies as a byproduct of electronic relaxation. These phonons should propagate through the crystal quasidiffusively.1 In contrast to these...

    M. E. Msall, M. S. Carroll, J. A. Shield… in Phonon Scattering in Condensed Matter VII (1993)