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Article
High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors
We present results on the growth of Al-Ga-In-N films in multiwafer reactors with 7×2′ wafer capacity. The design of these reactors allows the combination of high efficiency (TMGa efficiency for GaN around 30%)...
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Article
Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown ‘Templates’
We report on an improved quality of thick HVPE-GaN grown on MOCVD-GaN ‘template’ layers compared to the material grown directly on sapphire. The film-substrate interface revealed by cathodoluminescence measure...
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Article
Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown ‘Templates’
We report on an improved quality of thick HVPE-GaN grown on MOCVD-GaN ‘template’ layers compared to the material grown directly on sapphire. The film-substrate interface revealed by cathodoluminescence measure...
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Article
Rapid epitaxial growth of conducting and insulating III-V compounds on (001), (110), (111)A, (311)A, and (311)B surfaces by hydride vapor phase epitaxy
Rapid growth of conducting or insulating InP, GaAs, Ga0.47In0.53As, and GaAs0.6P0.4 on one or more of substrates of orientations (001), (110), (111)A, (311)A, and (311)B by hydride vapor phase epitaxy (HVPE) is d...
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Article
Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy
Photoluminescence (PL) and reflection spectra of undoped and Mg-doped GaN single layers grown on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) were investigated in a wide range of temperature...
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Article
Multiwafer Movpe of III-Nitride Films for Led and Laser Applications
Process for mass production of GaN and its related alloys, InGaN and AlGaN, have been optimized to achieve high device yield and low cost of ownership. Here we present some of the latest results obtained from ...
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Article
Reliable, Reproducible and Efficient MOCVD of III-Nitrides in Production Scale Reactors
In this paper we present a class of MOCVD reactors with loading capacities up to seven 2" wafers, designed for the mass production of LED structures.
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Article
Al-Ga-In-Nitride heterostructures: MOVPE growth in production reactors and characterization
Various Al-Ga-In Nitride alloys have been grown in AIXTRON Planetary Reactors®. GaN is grown with an excellent optical quality and very good thickness uniformity. GaInN with photoluminescence emission waveleng...
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Article
Movpe of InP and GaAs Based Optoelectronic Materials in a Multiwafer Production Reactor Using TBA and TBP Exclusively
In this paper a study of the growth of GaAs and InP based materials using the alternative precursors TBAs and TBP is presented. For this purpose mass production multiple wafer reactors were employed. Both long...
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Article
Selective growth of InP in the low pressure hydride VPE system
We have investigated the selective growth of InP in a low pressure hydride VPE system. Although the system operates further from thermodynamical equilibrium than the atmospheric pressure VPE system, high selec...
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Chapter and Conference Paper
From object-oriented programming to automatic load distribution
Method activations in object-oriented programs are viewed as generating a special kind of processes. The extension of object-oriented languages with a construct for sending multi-messages provides a means for ...
