Movpe of InP and GaAs Based Optoelectronic Materials in a Multiwafer Production Reactor Using TBA and TBP Exclusively

Abstract

In this paper a study of the growth of GaAs and InP based materials using the alternative precursors TBAs and TBP is presented. For this purpose mass production multiple wafer reactors were employed. Both long-wavelength materials such as GalnAsP on InP and short wavelegth like GalnP and AlGalnP on GaAs are investigated. The results demonstrate that ther is no loss of material quality when using these novel precursors. In all cases growth temperatures and V/III ratios could be significantly lowered.