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  1. No Access

    Article

    Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown ‘Templates’

    We report on an improved quality of thick HVPE-GaN grown on MOCVD-GaN ‘template’ layers compared to the material grown directly on sapphire. The film-substrate interface revealed by cathodoluminescence measure...

    T. Paskova, S. Tungasmita, E. Valcheva, E. B. Svedberg… in MRS Online Proceedings Library (2012)

  2. No Access

    Article

    Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy

    The crystal structure and surface morphology of hydride vapour phase epitaxy grown thick (12-105 μm) GaN layers have been investigated as a function of growth rate using several structure sensitive techniques ...

    T. Paskova, E. B. Svedberg, L. D. Madsen, R. Yakimova… in MRS Online Proceedings Library (2011)

  3. No Access

    Article

    Adsorption of Water on Lubricated and Non Lubricated TiC Surfaces for Data Storage Applications

    In this work we have studied the adsorption of water on TiC-coated quartz crystals to evaluate the use of TiC as a potential candidate for overcoats on magnetic media. It was observed that at room temperature ...

    E. B. Svedberg, N. Shukla in Tribology Letters (2004)

  4. No Access

    Article

    Electrodeposition of compositionally modulated Au/Co alloy layers

    Au/Co multilayers were electrodeposited from a single bath based on acid citrate, cobalt sulphate and gold cyanide electrolyte. The Taguchi statistical method was used for experiment planning and optimisation....

    S. Valizadeh, E.B. Svedberg, P. Leisner in Journal of Applied Electrochemistry (2002)

  5. Article

    Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown ‘Templates’

    We report on an improved quality of thick HVPE-GaN grown on MOCVD-GaN ‘template’ layers compared to the material grown directly on sapphire. The film-substrate interface revealed by cathodoluminescence measure...

    T. Paskova, S. Tungasmita, E. Valcheva… in MRS Internet Journal of Nitride Semiconduc… (2000)

    Download PDF (3473 KB) View Article

  6. Article

    Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy

    The crystal structure and surface morphology of hydride vapour phase epitaxy grown thick (12-105 μm) GaN layers have been investigated as a function of growth rate using several structure sensitive techniques ...

    T. Paskova, E.B. Svedberg, L.D. Madsen… in MRS Internet Journal of Nitride Semiconduc… (1999)

    Download PDF (1042 KB) View Article