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Article
New Synthesis of Castasterone
An improved synthesis that could produce gram quantities of castasterone was proposed. The starting material was stigmasterol, the cyclic part of which was transformed in the first synthetic step into the 3α,5...
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Article
Improving the Accuracy of Determining the Shape of Optical Spectra by Eliminating Interference Effects Using Fourier Analysis
We propose a method for eliminating the interference pattern from optical spectra, letting us improve the accuracy in determining the spectral function. The method is based on formal replacement of the energy ...
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Article
Structural and energy characteristics of native vacancy-type defects in the biaxially stressed GaN lattice
For biaxially stressed GaN clusters, the structure, charges, and energies of the formation of intrinsic Ga and N vacancies are calculated by the quantum-chemical method in the SCF MO LCAO approximation taking ...
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Article
Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates
With the aim of establishing the mechanisms for spontaneous recombination and lasing, we have studied InGaN/GaN multiple quantum well heterostructures emitting in the 450 nm region and grown by organometallic ...
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Article
Emission properties of thin films of electroactive doped polymers
We have studied the effect of the intensity of the exciting radiation and the temperature on the emission properties of two kinds of thin-film samples based on blends of two types of organic electroactive mate...
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Article
Lasing in Cd(Zn)Se/ZnMgSSe heterostructures pumped by nitrogen and InGaN/GaN lasers
Photoluminescence and lasing at a wavelength of λ=510–530 nm (green spectral region) in Cd(Zn)Se/ZnMgSSe structures with a different design of the active region are studied in a wide range of temperatures and ...
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Chapter and Conference Paper
Stimulated Emission and Gain in GaN Epilayers Grown on Si
Optical and lasing properties of GaN/Si and GaN/Si/SiO/Si structures with a strain reducing AlGaN/AlN layer stack were investigated in a wide range of optical excitation densities and within a temperature inte...
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Chapter and Conference Paper
Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures
Optically pumped lasing in GaN epitaxial layers and InGaN single, multiple and electroluminescence-test quantum well heterostructures grown on sapphire and silicon substrates are investigated as functions of t...
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Article
Reconstruction of excitonic spectrum during annealing of ZnSe:N grown by metalorganic vapor phase epitaxy
The reconstruction of the bound excitonic spectra of MOVPE-grown ZnSe:N samples caused by thermal annealing was observed. The results of the low temperature photoluminescence, reflection and SIMS measurements ...
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Article
Nature of the impurity bands of the edge luminescence of highly doped compensated ZnSe:N
A modification of the model of potential fluctuations is suggested to explain the experimentally observed dependences of the form and position of the maxima in the impurity luminescence spectra of ZnSe specime...
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Article
Directionality and mode structure of radiation of semiconductor lasers with electron-beam pum**
We present results of investigations of the directionality diagram and mode structure of radiation of semiconductor lasers with electron pum** that have microrelief reflectors instead of a blind mirror and o...
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Article
Electron-beam-excited lasers based on A2B6 compounds (review)
The literature on electron-beam-pumped semiconductor lasers (EPSLs) based on A2B6 compounds is reviewed. Recent advances in the development of EPSLs in the Nineties are reflected. The literature data on the outpu...
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Article
Structure of the free exciton luminescence band of heteroepitaxial ZnSe/GaAs layers
The exciton reflectance and photoluminescence spectra of epitaxial ZnSe/GaAs layers with a thickness of 2–4 µm are investigated in the temperature range 10–120 K. It is shown that one of the causes of the form...
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Article
Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy
Photoluminescence (PL) and reflection spectra of undoped and Mg-doped GaN single layers grown on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) were investigated in a wide range of temperature...
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Article
MOVPE of ZnMgSSe heterostructures for optically pumped blue-green lasers
We report on the growth of ZnMgSSe/ZnSSe/ZnSe heterostructures in a low pressure metalorganic vapor phase epitaxy (MOVPE) system at 400 hPa and a growth temperature of 330°C. The precursor combination was dime...
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Article
Optical and electrical properties of annealed ZnSe:N grown by metalloorganic vapor phase epitaxy
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Article
Luminescence and stimulated emior]ion of radiation in cadmium telluride monocrystals in streamer discharge channels
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Article
Effect of temperature and illumination on streamer discharges in cadmium sulfide and cadmium selenide single crystals
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Article
Influence of crystal thickness, temperature, uniaxial compression, polarity of the electrical pulse, and discharge interval on streamer discharges in cadmium sulfide