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Article
Photoluminescence of Low-Density Polyethylene Composites with the CaGa2S4:Eu2+ Phosphor
A study was carried out on the luminescence excitation spectra and photoluminescence (PL) spectra as well as the luminescence kinetics of low-density polyethylene composites with different contents of CaGa2S4:Eu2...
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Article
Laser Synthesis and Optical Properties of Hybrid Silicon Nanostructures for Photothermal Conversion of Solar Radiation
Dependences of the morphology and optical properties of silicon nanostructures on the laser ablation synthesis conditions, namely, the laser focusing conditions, laser pulse repetition rate, and temperature an...
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Article
Effect of the Density of Surface V-Defects on Laser Properties of InGaN/GaN Heterostructures with Multiple Quantum Wells Grown on Silicon Substrates
We investigated the radiative properties of InGaN/GaN heterostructures with multiple quantum wells (MQWs) grown on silicon substrates with different thicknesses of quantum wells at optical excitation. The corr...
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Article
Spontaneous and Stimulated Emission in Thin Films of Cu(In1 –xGax)(SySe1 –y)2 Solid Solutions in the Сomposition of Solar Cells
The emission spectra of thin nanocrystalline films of Cu(In1 – xGax)(SySe1 – y)2 (CIGSSe) direct-gap solid solutions in the structure of solar cells, recorded upon continuous-wave laser excitation (~0.5 W/cm2) an...
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Chapter and Conference Paper
ASC-Analysis of the Dependence of Volume and Structure of Highly Productive Dairy Cattle Incidence in Krasnodar Region
The aim of the research was to make a quantitative study of the dependence of volume and structure of the incidence of the imported selection cattle on the importing country. To identify and to study these dep...
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Article
MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3
The effect of molecular-beam epitaxy (MBE) growth conditions on properties of AlN epitaxial layers was investigated resulting in determination of optimal substrate temperature and ammonia flow. Optimal substra...
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Article
Luminescence and Stimulated Emission of Polycrystalline Cu(In,Ga)Se2 Films Deposited by Magnetron-Assisted Sputtering
The stimulated emission of Cu(In,Ga)Se2 alloy thin films formed by magnetron-assisted sputtering onto a sodium-fluoride layer deposited onto a molybdenum layer on a glass substrate is observed. The structural and...
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Article
Stimulated Emission and Optical Properties of Solid Solutions of Cu(In,Ga)Se2 Direct Band Gap Semiconductors
Stimulated emission, optical properties, and structural characteristics of non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films deposited on soda lime glass substrates using co-evaporation of elements in ...
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Article
Structure of vacuum Cu–Ta condensates
The structure of vacuum condensate foils (separated from substrates) of the binary Cu–Ta system has been investigated both in the initial condensed state and after annealings at temperatures of up to 1000°С. I...
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Article
Solar-blind Al x Ga1–x N (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter
Polarization-induced p-type do** of AlGaN layers with high aluminum content during plasmaassisted MBE growth has been studied. It is shown that a gradient of the AlN molar fraction in AlGaN (composition gradien...
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Article
Photoinduced grafting polymerization onto the surface with the use of radiation of high-power ultraviolet light-emitting diodes
The photoinduced grafting polymerization of acrylic acid onto the surface of a polypropylene film under the action of radiation with a wavelength of 365 nm and an intensity of 8–193 mW/cm2 emitted by high-power U...
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Article
Influence of Band Tailing on Photo- and Electroluminescence Polarization of m-Plane InGaN/GaN Quantum Well Heterostructures
Nonpolar m-plane InGaN/GaN light emitting diode structures with quantum well (QW) were grown on LiAlO2 (100) substrates. Their photoluminescence and electroluminescence were investigated at different excitation l...
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Article
Photoluminescence of Ca x Ba1–x Ga2S4 Solid Solutions Activated by Eu2+ Ions
We have studied the photoluminescence (PL) of Ca x Ba1–x Ga2S4 solid solutions (x = 0.1, 0.2, 0.3, 0.4, and 0.5) activated by ions of the rare-earth element Eu2+ ...
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Article
Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pum**
The paper presents basic approaches in designing and growing by molecular beam epitaxy of (Zn,Mg)(S,Se)-based laser heterostructures with multiple CdSe quantum dot (QD) sheets or ZnCdSe quantum wells (QW). The...
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Article
Luminescence and Lasing in ZnSe Micropowders at High Optical Excitation Levels
Photoluminescence (PL) of ZnSe wide-bandgap semiconductor micropowder was studied at a high optical excitation level by pulsed nanosecond N2-laser emission. A new emission band that appeared on the long-wavelengt...
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Chapter and Conference Paper
Random Lasing in ZnSe and CdSe Semiconductor Powders
Random lasing determines the effect of light generating in highly disordered scattering gain media and was firstly theoretically predicted by V.S. Letokhov in 1967 (Letokhov, JETP Lett 5:212–215, 1967). The fe...
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Article
Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates
This paper reports on the results of investigations of the spontaneous and stimulated luminescence in AlGaN heterostructures with a single quantum well and a high Al content (up to ∼80 mol % in barrier layers)...
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Article
Relationship of quantum-well potential profile and luminescence of InGaN/GaN heterostructures
Photoluminescence (PL) of a series of InGaN/GaN heterostructures with multiple quantum wells (QW) differing in their thicknesses and potential profiles that were grown by MOCVD on (0001) sapphire substrates was s...
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Article
Cathodoluminscence of barium and calcium thioand selenogallates co-doped with rare-earth elements
Cathodoluminescence spectra of the semiconductors (Ba,Ca)Ga2(S,Se)4:(Eu,Ce,Er,Yb) were studied and compared with their photoluminescence spectra. It was found that electron energy was converted most efficiently i...
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Chapter and Conference Paper
Investigation of GaN- and CuInGaSe2-Based Heterostructures for Optoelectronic Applications
GaN-based heterostructures are widely used nowadays in many applications such as high brightness light emitting diodes (LEDs), semiconductor lasers, photodetectors, transistors, solar cells, etc. An advantage ...