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    Al-Ga-In-Nitride heterostructures: MOVPE growth in production reactors and characterization

    Various Al-Ga-In Nitride alloys have been grown in AIXTRON Planetary Reactors®. GaN is grown with an excellent optical quality and very good thickness uniformity. GaInN with photoluminescence emission waveleng...

    R. Beccard, O. Schoen, B. Wachtendorf, D. Schhmitz… in Journal of Electronic Materials (1997)