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  1. No Access

    Article

    Photoluminescence of Low-Density Polyethylene Composites with the CaGa2S4:Eu2+ Phosphor

    A study was carried out on the luminescence excitation spectra and photoluminescence (PL) spectra as well as the luminescence kinetics of low-density polyethylene composites with different contents of CaGa2S4:Eu2...

    O. B. Tagiev, T. D. Ibragimov, I. S. Ramazanov… in Journal of Applied Spectroscopy (2024)

  2. No Access

    Article

    Photoluminescence of CaAl2O4:Eu3+ Nanoluminophores over Wide Intervals of Temperature and Laser Excitation Level

    Excitation and photoluminescence spectra of CaAl2O4:Eu3+ nanoluminophores were studied over wide intervals of temperature from 10 to 300 K and laser excitation level from 40 to 2.3·103 kW/cm2. Photoluminescence s...

    O. B. Tagiev, B. D. Urmanov, M. S. Leonenia… in Journal of Applied Spectroscopy (2022)

  3. No Access

    Article

    Stimulated Emission of Thin Cu(In, Ga)Se2 Films Irradiated by Protons

    Spontaneous and stimulated emission (SE) of thin Cu(In,Ga)Se2 films, deposited on sodium-containing glass substrates and irradiated by protons with an energy of 2.5 keV and doses of 1014–1017 cm–2, were investiga...

    I. E. Svitsiankou, V. N. Pavlovskii, Е. V. Lutsenko… in Journal of Applied Spectroscopy (2021)

  4. No Access

    Article

    Growth, Structure, and Temperature Dependence of the Band Gap of Mn0.3Ag0.7In4.1S6.8 Single Crystals

    Mn0.3Ag0.7In4.1S6.8 single crystals were grown by directed melt crystallization. Their composition and crystal structure were determined. It was established that the Mn0.3Ag0.7In4.1S6.8 single crystals crystalliz...

    I. I. Bodnar, V. N. Pavlovskii, I. E. Svitsiankou… in Journal of Applied Spectroscopy (2020)

  5. No Access

    Article

    Spontaneous and Stimulated Emission in Thin Films of Cu(In1 –xGax)(SySe1 –y)2 Solid Solutions in the Сomposition of Solar Cells

    The emission spectra of thin nanocrystalline films of Cu(In1 – xGax)(SySe1 – y)2 (CIGSSe) direct-gap solid solutions in the structure of solar cells, recorded upon continuous-wave laser excitation (~0.5 W/cm2) an...

    I. E. Svitsiankou, V. N. Pavlovskii, E. V. Muravitskaya, E. V. Lutsenko… in Semiconductors (2020)

  6. No Access

    Article

    Temperature Dependence of the Band-Gap Width of Mn1.5AgIn8.0S14 Single Crystals

    Mn1.5AgIn8.0S14 single crystals were grown by Bridgman directed melt crystallization. Their composition and crystal structure were determined. Single crystals crystallized in the cubic spinel structure with latti...

    I. V. Bodnar, Ch. B. Than, V. N. Pavlovskii… in Journal of Applied Spectroscopy (2020)

  7. No Access

    Article

    Structure of Photoluminescence Spectra of Oxygen-Doped Graphitic Carbon Nitride

    The relationships governing variation of the photoluminescence of graphitic carbon nitride synthesized by heat treatment of melamine in a closed air medium containing oxygen in the temperature range of 10–300 ...

    E. B. Chubenko, A. V. Baglov, M. S. Leonenya… in Journal of Applied Spectroscopy (2020)

  8. No Access

    Article

    Temperature Dependence of the Band Gap of MnAgIn7S12 Single Crystals

    MnAgIn7S12 single crystals 16 mm in diameter and ~40 mm in length are grown by planar crystallization of the melt. It is shown that the material grown crystallizes with the formation of the cubic spinel structure...

    I. V. Bodnar, B. T. Chan, V. N. Pavlovskii, I. E. Svitsiankou… in Semiconductors (2019)

  9. No Access

    Article

    MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3

    The effect of molecular-beam epitaxy (MBE) growth conditions on properties of AlN epitaxial layers was investigated resulting in determination of optimal substrate temperature and ammonia flow. Optimal substra...

    E. V. Lutsenko, M. V. Rzheutski, A. G. Vainilovich, I. E. Svitsiankou… in Semiconductors (2018)

  10. No Access

    Article

    Luminescence and Stimulated Emission of Polycrystalline Cu(In,Ga)Se2 Films Deposited by Magnetron-Assisted Sputtering

    The stimulated emission of Cu(In,Ga)Se2 alloy thin films formed by magnetron-assisted sputtering onto a sodium-fluoride layer deposited onto a molybdenum layer on a glass substrate is observed. The structural and...

    I. E. Svitsiankou, V. N. Pavlovskii, E. V. Lutsenko, G. P. Yablonskii… in Semiconductors (2018)

  11. No Access

    Article

    Stimulated Emission and Optical Properties of Solid Solutions of Cu(In,Ga)Se2 Direct Band Gap Semiconductors

    Stimulated emission, optical properties, and structural characteristics of non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films deposited on soda lime glass substrates using co-evaporation of elements in ...

    I. E. Svitsiankou, V. N. Pavlovskii, E. V. Lutsenko… in Journal of Applied Spectroscopy (2018)

  12. No Access

    Article

    Photoluminescence of Ca x Ba1–x Ga2S4 Solid Solutions Activated by Eu2+ Ions

    We have studied the photoluminescence (PL) of Ca x Ba1–x Ga2S4 solid solutions (x = 0.1, 0.2, 0.3, 0.4, and 0.5) activated by ions of the rare-earth element Eu2+ ...

    M. S. Leanenia, E. V. Lutsenko, N. V. Rzheutskij… in Journal of Applied Spectroscopy (2015)

  13. No Access

    Article

    Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pum**

    The paper presents basic approaches in designing and growing by molecular beam epitaxy of (Zn,Mg)(S,Se)-based laser heterostructures with multiple CdSe quantum dot (QD) sheets or ZnCdSe quantum wells (QW). The...

    S. V. Sorokin, S. V. Gronin, I. V. Sedova, M. V. Rakhlin, M. V. Baidakova… in Semiconductors (2015)

  14. No Access

    Article

    Luminescence and Lasing in ZnSe Micropowders at High Optical Excitation Levels

    Photoluminescence (PL) of ZnSe wide-bandgap semiconductor micropowder was studied at a high optical excitation level by pulsed nanosecond N2-laser emission. A new emission band that appeared on the long-wavelengt...

    M. S. Leanenya, E. V. Lutsenko, V. N. Pavlovskii… in Journal of Applied Spectroscopy (2015)

  15. No Access

    Article

    Luminescence of Ca0.5Ba0.5Ga2S4 crystals activated by Eu2+ and Er3+ ions

    The photoluminescence (PL) in the visible spectral range of Ca0.5Ba0.5Ga2S4 solid solutions activated with ions of rare-earth elements Eu2+ and Er3+ has been studied in the temperature range of 10–300 K. The PL s...

    B. G. Tagiev, O. B. Tagiev, T. G. Nagiev, S. G. Asadullaeva… in Optics and Spectroscopy (2015)

  16. No Access

    Chapter and Conference Paper

    Random Lasing in ZnSe and CdSe Semiconductor Powders

    Random lasing determines the effect of light generating in highly disordered scattering gain media and was firstly theoretically predicted by V.S. Letokhov in 1967 (Letokhov, JETP Lett 5:212–215, 1967). The fe...

    Maksim S. Leanenia, E. V. Lutsenko… in Nano-Structures for Optics and Photonics (2015)

  17. No Access

    Article

    Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates

    This paper reports on the results of investigations of the spontaneous and stimulated luminescence in AlGaN heterostructures with a single quantum well and a high Al content (up to ∼80 mol % in barrier layers)...

    E. V. Lutsenko, N. V. Rzheutskii, V. N. Pavlovskii… in Physics of the Solid State (2013)

  18. No Access

    Article

    Relationship of quantum-well potential profile and luminescence of InGaN/GaN heterostructures

    Photoluminescence (PL) of a series of InGaN/GaN heterostructures with multiple quantum wells (QW) differing in their thicknesses and potential profiles that were grown by MOCVD on (0001) sapphire substrates was s...

    E. V. Lutsenko, M. V. Rzheutski, V. N. Pavlovskii… in Journal of Applied Spectroscopy (2013)

  19. No Access

    Article

    Cathodoluminscence of barium and calcium thioand selenogallates co-doped with rare-earth elements

    Cathodoluminescence spectra of the semiconductors (Ba,Ca)Ga2(S,Se)4:(Eu,Ce,Er,Yb) were studied and compared with their photoluminescence spectra. It was found that electron energy was converted most efficiently i...

    V. N. Pavlovskii, V. Z. Zubialevich, E. V. Lutsenko… in Journal of Applied Spectroscopy (2013)

  20. No Access

    Chapter and Conference Paper

    Investigation of GaN- and CuInGaSe2-Based Heterostructures for Optoelectronic Applications

    GaN-based heterostructures are widely used nowadays in many applications such as high brightness light emitting diodes (LEDs), semiconductor lasers, photodetectors, transistors, solar cells, etc. An advantage ...

    Mikalai V. Rzheutski, E. V. Lutsenko… in Nano-Optics for Enhancing Light-Matter Int… (2013)

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