Abstract
In this paper we present a class of MOCVD reactors with loading capacities up to seven 2" wafers, designed for the mass production of LED structures.
Our processes yield device quality GaN with excellent PL uniformities better than 1 nm across a 2" wafer and thickness uniformities typically better than 2%.
We also present full 2" wafer map** data, High Resolution Photoluminescence Wafer Scanning and sheet resistivity map**, revealing the excellent composition uniformity of the nitride compounds InGaN and AlGaN. As well we will show sheet resistivity uniformity for Si-doped GaN and Mg-doped GaN.
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Acknowledgement
The authors acknowledge the work of W. Michel at the AIXTRON Application Lab, Aachen, Germany, as well as the contribution of H. Obloh, P. Schlotter, U. Kaufmann and N. Herres of the Fraunhofer Institute for Applied Solid State Physics, Freiburg, Germany.
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Wachtendorf, B., Beccard, R., Schmitz, D. et al. Reliable, Reproducible and Efficient MOCVD of III-Nitrides in Production Scale Reactors. MRS Online Proceedings Library 468, 7–11 (1997). https://doi.org/10.1557/PROC-468-7
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DOI: https://doi.org/10.1557/PROC-468-7