480 Result(s)
within
Chapter
**e **an
Electronics and Microelectronics, Instrumentation
Engineering, general
Optical and Electronic Materials
-
Chapter
Hf-Based High-k Gate Dielectric Processing
This chapter focuses on the processing of Hf-based high-k gate dielectric film and its device fabrication to improve its electrical properties. First, the formation process of Hf-based high-k dielectric thin f...
-
Chapter
Crystalline Oxides on Silicon
The ability to integrate crystalline metal oxide dielectric layers into silicon structures can open the way for a variety of novel applications which enhances the functionality and flexibility, ranging from hi...
-
Chapter
V FB /V TH Anomaly in High-k Gate Stacks
One of the biggest challenges of metal/high-k gate stack technology is controlling the threshold voltage (V TH ) because achieving a high performance CMOS is almost im...
-
Chapter
Reliability Implications of Fast and Slow Degradation Processes in High-k Gate Stacks
Aggressive transistor scaling to achieve better chip functionality is driving the introduction of high-k dielectric materials into traditional device gate stacks. These advanced gate stacks are multilayer stru...
-
Chapter
Introduction to High-k Gate Stacks
The manifold aim of this chapter is: (1) to present a simple summary of the contents of the eleven other chapters of the book in a manner as continuous and cohesive as possible; (2) more importantly, to provid...
-
Chapter
Hafnium-Based Gate Dielectric Materials
In this chapter, we focus on hafnium-based gate dielectrics. HfO2 is regarded as the most promising material for the high–k gate dielectrics owing to its large dielectric constant and large band-gap energy. In th...
-
Chapter
Ternary HfO2 and La2O3 Based High-k Gate Dielectric Films for Advanced CMOS Applications
We first discuss HfO2-based ternary high-k dielectric films. We emphasize that ternary materials do not only exhibit average properties expected by the mean-media model, but that they also reveal unexpected prope...
-
Chapter
Metal Gate Electrodes
Metal gate electrodes are a vital enabler for the use of high-k gate dielectrics in advanced complimentary metal oxide semiconductor (CMOS) technology. This chapter will detail how metal gate electrodes were s...
-
Chapter
High Mobility Channels
The need for high-κ gate dielectrics and metal gates for advanced integrated circuits has re-opened the door to germanium and III–V compounds as potential replacements for silicon channels, offering the possib...
-
Chapter
Channel Mobility
Effective channel mobility, μeff, of high-k gate dielectrics in various device technologies is discussed in detail. Initially, the background on mobility is provided with brief explanations on different scatterin...
-
Chapter
Lanthanide-Based High-k Gate Dielectric Materials
This chapter covers selected issues related to lanthanides (or lanthanoids) used in oxide gate dielectrics. In general, lanthanides offer key material property advantages for gate dielectric applications. Thes...
-
Chapter
MOSFET: Basics, Characteristics, and Characterization
This chapter attempts to provide a theoretical basis for the Metal Oxide (Insulator) Semiconductor (MOS/MIS) Structure and the MOS/MIS Field Effect Transistor (MOSFET/MISFET), their characteristics, and their ...
-
Chapter
Special Considerations for Clay-Based Materials
The main contribution of this chapter is to show special considerations applicable to clay nanocomposites. Clay nanocomposites, which comprise clays of nano-scale dimension dispersed in polymer materials, have...
-
Chapter
Optical Properties I
The fundamental energy gaps of most semiconductors span the energy range from zero to about 6 eV. Photons of sufficient energy can excite electrons from the filled valence bands to the empty conduction bands. ...
-
Chapter
The Emerging Mechanistic Picture
Electron energy band structure in polymers, particularly polyethylene, and electron injection, transport and trap** are briefly reviewed. The interface model of polymer nanocomposites is then described, and ...
-
Chapter
Characterization of Hygroscopic Deformations by Moiré Interferometry
In this chapter, hygroscopic swelling behavior of mold compounds is characterized by a novel experimental procedure using a whole-field displacement technique called moiré interferometry. Large variation in mo...
-
Chapter
Basic Consequences of sp–d and d–d Interactions in DMS
In this introductory chapter, we describe the basic features of diluted magnetic semiconductors. We focus on giant Zeeman splitting of excitons and related giant Faraday rotation. We show that the spin splitti...
-
Chapter
Modeling the Physics and Chemistry of Interfaces in Nanodielectrics
The properties of nanodielectrics can be dominated by interfacial phenomena. This chapter reviews recent work performed using ab initio density functional theory (DFT) aimed at interfacial properties pertinent...
-
Chapter
Photoelectron Spectroscopy
The reader will have noticed, especially in Chaps. 6 and 7, that a great deal of the information thus far presented has been obtained by spectroscopic techniques. By this is meant experiments in which the number ...
-
Chapter
Hygroscopic Swelling of Polymeric Materials in Electronic Packaging: Characterization and Analysis
In this chapter, the characterization of hygroscopic swelling using point-measurement method is described. In this method, the averaged swelling-induced strain and the averaged moisture concentration are used ...
