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Article
High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer
Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gassource molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown ...
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Article
Characterization of InGaN Quantum Wells Grown by Molecular Beam Epitaxy (MBE) Using Ammonia as the Nitrogen Source
Single quantum well InGaN was grown by molecular beam epitaxy with ammonia as the nitrogen source. The samples were grown on (0001) sapphire substrates. The photoluminescence (PL) intensity of InGaN quantum we...
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Chapter
Dilute Nitride Photodetector and Modulator Devices
The application of the GaInNAsSb compound to the design and fabrication of photodetector and modulator devices for telecommunications is reviewed. An advantage of the material is that even though it is GaAs-ba...
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Article
High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer
Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown...
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Article
Comparison of GaAs grown on standard Si (511) and compliant SOI (511)
Gallium arsenide (GaAs) films were grown by molecular beam epitaxy (MBE) on a (511) silicon substrate and a compliant (511) silicon-on-insulator (SOI) substrate. The top silicon layer of the compliant (511) SO...
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Article
Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate
We present in this article device characteristics of molecular beam epitaxy grown GaAs/AlGaAs quantum well infrared photodetectors (QWIP) on a semi-insulating GaAs substrate and on a GaAs-on-Si substrate grown...
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Article
Monolithically Integrated Dual-Band Quantum Well Infrared Photodetector
A monolithic quantum well infrared photodetector (QWIP) structure has been presented that is suitable for dual bands in the two atmospheric transmission windows of 3 - 5.3 fum and 7.5 - 14fum, respectively. Th...
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Article
P-type Mg-doped GaN grown by molecular beam epitaxy using ammonia as the nitrogen source
The electrical and luminescent properties of Mg-doped GaN films grown by molecular beam epitaxy (MBE) using ammonia as the nitrogen source have been investigated. Due to their different growth environments, th...
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Article
The Problem of Do** Wide Gap II-VI Compound Semiconductors and Its Solutions
Wide gap II-VI compound semiconductors are difficult to be doped amphoterically. After more than thirty years of research in II-VI compound semiconductors, there does not even exist a satisfatory simultaneous ...
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Article
Low Temperature Growth of Gaas Quantum Well Lasers by Modulated Beam Epitaxy
GaAs single quantum well lasers have been successfully grown at low temperatures by a modulated beam epitaxy process in which the Al/Ga flux is held constant while the As flux is periodically shut off to produ...
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Chapter
Resonant Magnetotunneling in Type II Heterostructures
We review the experimental effects of a magnetic field on the current-voltage characteristics of type II resonant-tunneling structures, mainly GaSb-AlSb-InAs-AlSb-GaSb. Their behavior under field, found to be ...
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Chapter
Magneto-Optics of [111] GaAs/GaAlAs Quantum Wells
The electronic and optical properties of GaAs/GaAlAs quantum wells (QWs) have been profusely studied in the last twenty years, since its concept was introduced by Esaki and Tsu[l]. Their optical properties are...
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Chapter
Tunneling in Polytype InAs/AlSb/GaSb Heterostructures
Polytype heterostructures of GaSb/AlSb/InAs show interband tunneling due to the 0.1 eV overlap of the InAs conduction band and the GaSb valence band. This broken-gap configuration results in a novel mechanism ...
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Chapter
Excitons in Low Dimensional Semiconductors
We present high resolution pseudo-absorption spectra of GaAs/GaAIAs quantum wells. Information on the energy spectrum of excitons is obtained from low temperature photoluminescence excitation spectroscopy. The...
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Article
High Pressure Optical Studies of GaSb-AlSb Multiple Quantum Wells
The pressure coefficients (α) of the excitonic transitions arising from the conduction (CB) to the heavy (HH) and light (LH) hole sub-bands of a GaSb-AlSb multiple quantum well structure (MQW) grown on a GaAs ...
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Chapter and Conference Paper
The Two-Dimensional Density of States at Fractional Filling Factors
Magnetocapacitance measurements have yielded the density of states of a two-dimensional electron gas from the weak-field limit to the extreme quantum limit. Quantitative information about the density of states...
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Chapter and Conference Paper
Fractional Hall Quantization of Two-Dimensional Holes in Gaas-GaAlAs Heterostructures
The quantum Hall effect in two-dimensional electron systems has been reported in a number of heterostructures,1–4 in which the Hall resistance, ρxy =h/νe2, shows plateaus at integral values of ν and the magneto-r...
