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Comparison of GaAs grown on standard Si (511) and compliant SOI (511)

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Abstract

Gallium arsenide (GaAs) films were grown by molecular beam epitaxy (MBE) on a (511) silicon substrate and a compliant (511) silicon-on-insulator (SOI) substrate. The top silicon layer of the compliant (511) SOI was thinned to ∼1000 Å. The five inch diameter SOI wafer was created by wafer bonding. The GaAs (004) x-ray diffraction (XRD) reflection showed a 25% reduction in the full width half maximum (FWHM) for GaAs on a compliant (511) SOI as compared to GaAs on a silicon substrate. Cross section transmission electron microscopy (XTEM) clearly indicates a different dislocation structure for the two substrates. The threading dislocation density is reduced by at least an order of magnitude in the compliant (511) SOI as compared to the (511) silicon. XTEM found dislocations and damage was generated in the top silicon layer of the compliant SOI substrate after GaAs growth.

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References

  1. H. Unlu, H. Morkoc, and S. Iyer, Gallium Arsenide Technology, Vol. II, (Indianapolis, IN: Howard W. Sams & Company, 1990).

    Google Scholar 

  2. R. Fischer, H. Morkoc. D. Neumann, H. Zabel, C. Choi, N. Otsuka, M. Longerbone, and L.P. Erickson, J. Appl. Phys. 60, 1640 (1986).

    Article  CAS  Google Scholar 

  3. K. Longgenbach and W. Wang, Appl. Phys. Lett. 59, 2427 (1991).

    Article  Google Scholar 

  4. I.W. Tao and W. Wang, J. Vac. Sci. Tech. B13, 731 (1995).

    Google Scholar 

  5. M.L. Seaford, P.J. Hesse, D.H. Tomich, and K.G. Eyink, J. Electron. Mater. 28, 878 (1999).

    Article  CAS  Google Scholar 

  6. Z. Yang, J. Alperin, W.I. Wang, S.S. Iyer, T. S. Kuan, and F. Semendy, J. Vac. Sci. Tech. B16, 1489 (1998).

    Google Scholar 

  7. J.W. Matthews and A.E. Blakeslee, J. Cryst. Growth 27, 188 (1974).

    Google Scholar 

  8. L.B Freund and W.D. Nix, Appl. Phys. Lett. 69, 173 (1996).

    Article  CAS  Google Scholar 

  9. T.-Y. Zhang and T.-J. Su, Appl. Phys. Lett. 74, 1689 (1999).

    Article  CAS  Google Scholar 

  10. S.J. Pearton, S.M. Vernon, K.T. Short, J.M. Brown, C.R. Abernathy, R. Caruso, S.N.G. Chu, V.E. Haven, and S.N. Bunker, Appl. Phys. Lett. V51, 1188 (1987).

    Article  Google Scholar 

  11. S.J. Pearton, C.R. Abernathy, R. Caruso, S.M. Vernon, K.T. Short, J.M. Brown, S.N.G. Chu, M. Stavola, and V.E. Haven, J. Appl. Phys. 63, 775 (1988).

    Article  CAS  Google Scholar 

  12. H.B. Kroemer, Proc. Mater. Res. Soc. 67, 3 (1986).

    CAS  Google Scholar 

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Author notes

  1. Z. Yang

    Present address: Hopewell Junction, IBM Microelectronics Division, 12533, NY

Authors and Affiliations

  1. Materials and Manufacturing Directorate, Air Force Research Laboratory, 45433-7707, WPAFB, OH

    M. L. Seaford, D. H. Tomich, K. G. Eyink, L. Grazulis & K. Mahalingham

  2. Department of Electrical Engineering, NYC, Columbia University, 10027, NY

    Z. Yang & W. I. Wang

Authors
  1. M. L. Seaford
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  2. D. H. Tomich
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  3. K. G. Eyink
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  4. L. Grazulis
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  5. K. Mahalingham
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  6. Z. Yang
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  7. W. I. Wang
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Seaford, M.L., Tomich, D.H., Eyink, K.G. et al. Comparison of GaAs grown on standard Si (511) and compliant SOI (511). J. Electron. Mater. 29, 906–908 (2000). https://doi.org/10.1007/s11664-000-0179-0

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  • DOI: https://doi.org/10.1007/s11664-000-0179-0

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