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The Problem of Do** Wide Gap II-VI Compound Semiconductors and Its Solutions

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Abstract

Wide gap II-VI compound semiconductors are difficult to be doped amphoterically. After more than thirty years of research in II-VI compound semiconductors, there does not even exist a satisfatory simultaneous explanation as to why ZnSe can be easily doped n-type while undoped ZnTe only exhibits p-type conductivity. In this paper we propose an explanation based on the III-V/II-VI analogy which for the first time can explain these phenomena, and provide solutions to the problem of do** II-VI compound semiconductors.

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Authors and Affiliations

  1. Department of Electrical Engineering, Columbia University, New York, NY, 10027

    W. I. Wang

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  1. W. I. Wang
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Wang, W.I. The Problem of Do** Wide Gap II-VI Compound Semiconductors and Its Solutions. MRS Online Proceedings Library 228, 319–325 (1991). https://doi.org/10.1557/PROC-228-319

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