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  1. No Access

    Article

    Epitaxial c-GaAs/h-GaN Heterostructures

    GaAs/GaN heterostructures were grown by molecular-beam epitaxy using GaN/supphire (0001) templates. In spite of a ~20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesi...

    V. V. Chaldyshev, Yu. G. Musikhin, N. A. Bert, B. Nielsen… in MRS Online Proceedings Library (2005)

  2. No Access

    Chapter

    Tailoring of Spin-Dependent Excitonic Interaction in Quantum Wells by an Electric Field

    We have studied the dynamics of a spin-polarised excitonic gas under the influence of an external electric field using time-resolved photoluminescence spectroscopy. This extends our previous investigations of ...

    G. Aichmayr, L. Viña, E. E. Mendez in Optical Properties of Semiconductor Nanostructures (2000)

  3. No Access

    Chapter

    Novel Electro-Optical Device Structures Based on Quantum Wells

    The variety of material combinations available for epitaxial semiconductor heterostructures has made it possible to envision optical devices with new and desirable characteristics. Here I describe two examples...

    E.E. Mendez in Optical Phenomena in Semiconductor Structures of Reduced Dimensions (1993)

  4. No Access

    Book

    Resonant Tunneling in Semiconductors

    Physics and Applications

    L. L. Chang, E. E. Mendez, C. Tejedor in NATO ASI Series (1991)

  5. No Access

    Chapter

    Resonant Magnetotunneling in Type II Heterostructures

    We review the experimental effects of a magnetic field on the current-voltage characteristics of type II resonant-tunneling structures, mainly GaSb-AlSb-InAs-AlSb-GaSb. Their behavior under field, found to be ...

    E. E. Mendez, H. Ohno, L. Esaki, W. I. Wang in Resonant Tunneling in Semiconductors (1991)

  6. No Access

    Chapter

    Excitons in Low Dimensional Semiconductors

    We present high resolution pseudo-absorption spectra of GaAs/GaAIAs quantum wells. Information on the energy spectrum of excitons is obtained from low temperature photoluminescence excitation spectroscopy. The...

    L. Viña, E. E. Mendez, W. I. Wang… in Science and Engineering of One- and Zero-D… (1990)

  7. No Access

    Chapter

    Applications of Resonant Tunneling in Semiconductor Heterostructures

    These notes are the third part of a set of three lectures presenting the basic concepts related to resonant tunneling in semiconductor heterostructures, and their application to electronic devices. The first t...

    E. E. Mendez in Interfaces, Quantum Wells, and Superlattices (1988)

  8. No Access

    Book

    Physics and Applications of Quantum Wells and Superlattices

    E. E. Mendez, K. von Klitzing in NATO ASI Series (1987)

  9. No Access

    Chapter

    Physics of Resonant Tunneling in Semiconductors

    The concept of tunneling through a potential barrier lies at the core of quantum mechanics, and its experimental observation is a manifestation of the wave-like behavior of matter. Since the early days of quan...

    E. E. Mendez in Physics and Applications of Quantum Wells and Superlattices (1987)

  10. No Access

    Chapter and Conference Paper

    Low-Temperature Magnetotransport in InAs-GaSb Quantum Wells

    We report measurements of the magneto and Hall resistance in GaSb-InAs-GaSb heterostructures at magnetic fields up to 28T and temperatures as low as 0.005K. In addition to the quantized Hall effect, extraordin...

    E. E. Mendez, S. Washburn, L. Esaki… in Proceedings of the 17th International Conf… (1985)

  11. No Access

    Chapter and Conference Paper

    Fractional Hall Quantization of Two-Dimensional Holes in Gaas-GaAlAs Heterostructures

    The quantum Hall effect in two-dimensional electron systems has been reported in a number of heterostructures,1–4 in which the Hall resistance, ρxy =h/νe2, shows plateaus at integral values of ν and the magneto-r...

    L. L. Chang, E. E. Mendez, W. I. Wang… in Proceedings of the 17th International Conf… (1985)

  12. No Access

    Chapter and Conference Paper

    Resonant Raman Scattering in GaSb-AlSb Superlattices

    The electronic properties of GaSb-AlSb superlattices (SL) have been recently analyzed by different experimental techniques showing unambiguously the formation of electronic subbands at the Γ-point 1-2. To our kno...

    C. Tejedor, J. M. Calleja, F. Meseguer… in Proceedings of the 17th International Conf… (1985)

  13. No Access

    Chapter and Conference Paper

    Electric Field-Induced Decrease of Excition Lifetimes in GaAs Quantum Wells

    Previously[1], the c.w. photoluminescence (PL) at helium temperatures for excitons confined in quantum wells has been seen to decrease sharply (i.e. is quenched) when an electric field is applied perpendicular to...

    J. A. Kash, E. E. Mendez, H. Morkoç in Picosecond Electronics and Optoelectronics (1985)

  14. No Access

    Article

    Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctions

    The dependence on photon energy of the persistent photoconductivity (PPC) in selectively doped high mobility Al0.3Ga0.7As—GaAs heterostructures has been measured at temperatures below 80 K. A decrease in conducti...

    M. I. Nathan, T. N. Jackson, P. D. Kirchner… in Journal of Electronic Materials (1983)