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  1. No Access

    Article

    Comparison of InGaSb/InAs superlattice structures grown by MBE on GaSb, GaAs, and compliant GaAs substrates

    This paper contains the characterization results for indium arsenide/indium gallium antimonide (InAs/InGaSb) superlattices (SL) that were grown by molecular beam epitaxy (MBE) on standard gallium arsenide (GaA...

    D. H. Tomich, K. G. Eyink, L. Grazulis, G. L. Brown… in Journal of Electronic Materials (2000)

  2. No Access

    Article

    Type-II InAs/InGaSb Superlattices on Compliant GaAs Substrates

    Type-II InAs/GaInSb superlattices of different designs have been grown by molecular beam epitaxy on wafer bonded InGaAs on GaAs, and on standard GaSb substrates. The extremely thin (∼100Å) InGaAs layer is loos...

    G. J. Brown, K. Mahalingam, A. Saxler, R. Linville… in MRS Online Proceedings Library (2000)

  3. No Access

    Article

    Comparison of GaAs grown on standard Si (511) and compliant SOI (511)

    Gallium arsenide (GaAs) films were grown by molecular beam epitaxy (MBE) on a (511) silicon substrate and a compliant (511) silicon-on-insulator (SOI) substrate. The top silicon layer of the compliant (511) SO...

    M. L. Seaford, D. H. Tomich, K. G. Eyink, L. Grazulis… in Journal of Electronic Materials (2000)

  4. No Access

    Article

    The use of computer controlled group V valved sources for interface type control in InGaSb/InAs strained layer superlattices

    The purpose of this research is to demonstrate the necessity of computer controlled valved group V effusion cell sources in the growth of indium gallium antimonide/indium arsenide (InGaSb/InAs). These sources ...

    M. L. Seaford, J. S. Solomon, D. H. Tomich, K. G. Eyink in Journal of Electronic Materials (1999)

  5. No Access

    Article

    Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates

    Using solid source molecular beam epitaxy (MBE) of gallium antimonide (GaSb) and indium antimonide (InSb), we have demonstrated1 the ability to grow dislocation free lattice mismatched materials on gallium arseni...

    M. L. Seaford, P. J. Hesse, D. H. Tomich, K. G. Eyink in Journal of Electronic Materials (1999)