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Article
High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer
Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gassource molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown ...
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Article
Characterization of InGaN Quantum Wells Grown by Molecular Beam Epitaxy (MBE) Using Ammonia as the Nitrogen Source
Single quantum well InGaN was grown by molecular beam epitaxy with ammonia as the nitrogen source. The samples were grown on (0001) sapphire substrates. The photoluminescence (PL) intensity of InGaN quantum we...
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Article
High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer
Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown...
