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  1. No Access

    Article

    Micro-raman study of the damage in nanopatterned GaAs(001)

    A single-point diamond machine fabricated patterns with a series of equispaced lines in an area of nominally 10 µm × 10 µm. On a single GaAs wafer, patterns having 80, 100, 120, and 140 lines were machined. Sa...

    K. G. Eyink, L. Grazulis, J. C. Reber, J. D. Busbee in Journal of Electronic Materials (2002)

  2. No Access

    Article

    Comparison of InGaSb/InAs superlattice structures grown by MBE on GaSb, GaAs, and compliant GaAs substrates

    This paper contains the characterization results for indium arsenide/indium gallium antimonide (InAs/InGaSb) superlattices (SL) that were grown by molecular beam epitaxy (MBE) on standard gallium arsenide (GaA...

    D. H. Tomich, K. G. Eyink, L. Grazulis, G. L. Brown… in Journal of Electronic Materials (2000)

  3. No Access

    Article

    Comparison of GaAs grown on standard Si (511) and compliant SOI (511)

    Gallium arsenide (GaAs) films were grown by molecular beam epitaxy (MBE) on a (511) silicon substrate and a compliant (511) silicon-on-insulator (SOI) substrate. The top silicon layer of the compliant (511) SO...

    M. L. Seaford, D. H. Tomich, K. G. Eyink, L. Grazulis… in Journal of Electronic Materials (2000)

  4. No Access

    Article

    Real-Time Monitoring by Spectroscopic Ellipsometry and Desorption Mass Spectroscopy During Molecular Beam Epitaxy of AlGaAs/GaAs at High Substrate Temperatures

    A series of AlGaAs/GaAs depositions were monitored in-situ by spectroscopic ellipsometry and desorption mass spectroscopy, under various substrate temperatures (890 K - 990 K) where non-unity sticking conditio...

    Dr. W. T. Taferner, K. Mahalingam, D. L. Dorsey… in MRS Online Proceedings Library (1999)

  5. No Access

    Article

    A Kinetic Monte Carlo Model for Ga Desorption from Chemisorbed and Physisorbed States During High Temperature GaAs MBE

    A kinetic Monte Carlo model is developed to examine the influence of As/Ga flux ratio on the Ga desorption kinetics during molecular beam epitaxy of (100)-GaAs, based on data reported in desorption mass spectr...

    K. Mahalingam, D. L. Dorsey, W. T. Taferner, K. G. Eyink in MRS Online Proceedings Library (1999)

  6. No Access

    Article

    The use of computer controlled group V valved sources for interface type control in InGaSb/InAs strained layer superlattices

    The purpose of this research is to demonstrate the necessity of computer controlled valved group V effusion cell sources in the growth of indium gallium antimonide/indium arsenide (InGaSb/InAs). These sources ...

    M. L. Seaford, J. S. Solomon, D. H. Tomich, K. G. Eyink in Journal of Electronic Materials (1999)

  7. No Access

    Article

    Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates

    Using solid source molecular beam epitaxy (MBE) of gallium antimonide (GaSb) and indium antimonide (InSb), we have demonstrated1 the ability to grow dislocation free lattice mismatched materials on gallium arseni...

    M. L. Seaford, P. J. Hesse, D. H. Tomich, K. G. Eyink in Journal of Electronic Materials (1999)

  8. No Access

    Article

    A comparison of the critical thickness for MBE grown Lt-GaAs determined by In-Situ ellipsometry and transmission electron microscopy

    The growth of low temperature (LT) GaAs by molecular beam epitaxy has been studied using ellipsometry. Different regimes of growth were observed in the data, depending on film thickness. Epitaxial growth of ps...

    K. G. Eyink, M. A. Capano, S. D. Walck, T. W. Haas… in Journal of Electronic Materials (1997)

  9. No Access

    Article

    Modeling of MBE Growth with Interacting Fluxes

    Ternary and quaternary III-V alloys are important for many optical device applications, and a precise control of the composition is required. Molecular beam epitaxy (MBE) is generally considered a non-equilibr...

    David H. Tomich, K. G. Eyink, T. W. Haas, M. A. Capano… in MRS Online Proceedings Library (1994)

  10. No Access

    Article

    Observation of low-T GaAs growth regimes by real-time ellipsometry

    The molecular beam epitaxial growth of low temperature (LT) GaAs films has been studied by real-time ellipsometry. A modification in a GaAs (001) surface by cooling under a specific As2 flux caused a change in th...

    K. G. Eyink, Y. S. Cong, M. A. Capano, T. W. Haas… in Journal of Electronic Materials (1993)

  11. No Access

    Article

    Real-time, heuristic-based controlof molecular beam epitaxy

    Real-time, heuristic-based control is appropriate for materials processes where accurate numerical models are not available. Frequently,bdthe scientists working with a process base their decisions when control...

    O. D. Patterson, K. G. Eyink, S. Cong in Journal of Materials Engineering and Performance (1993)