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Article
Comparison of InGaSb/InAs superlattice structures grown by MBE on GaSb, GaAs, and compliant GaAs substrates
This paper contains the characterization results for indium arsenide/indium gallium antimonide (InAs/InGaSb) superlattices (SL) that were grown by molecular beam epitaxy (MBE) on standard gallium arsenide (GaA...
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Article
Type-II InAs/InGaSb Superlattices on Compliant GaAs Substrates
Type-II InAs/GaInSb superlattices of different designs have been grown by molecular beam epitaxy on wafer bonded InGaAs on GaAs, and on standard GaSb substrates. The extremely thin (∼100Å) InGaAs layer is loos...
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Article
Comparison of GaAs grown on standard Si (511) and compliant SOI (511)
Gallium arsenide (GaAs) films were grown by molecular beam epitaxy (MBE) on a (511) silicon substrate and a compliant (511) silicon-on-insulator (SOI) substrate. The top silicon layer of the compliant (511) SO...
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Article
The use of computer controlled group V valved sources for interface type control in InGaSb/InAs strained layer superlattices
The purpose of this research is to demonstrate the necessity of computer controlled valved group V effusion cell sources in the growth of indium gallium antimonide/indium arsenide (InGaSb/InAs). These sources ...
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Article
Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates
Using solid source molecular beam epitaxy (MBE) of gallium antimonide (GaSb) and indium antimonide (InSb), we have demonstrated1 the ability to grow dislocation free lattice mismatched materials on gallium arseni...
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Article
Chemical Beam Epitaxy of GANxJx−1 Using a N Radical Beam Source
In this study we report the growth behavior of GaNxP1−x by chemical beam epitaxy using triethylgallium, tertiarybutylphosphine, and a RF-plasma N radical beam source. We demonstrate that the N radical beam source...