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  1. No Access

    Article

    1550 nm Range High-Speed Single-Mode Vertical-Cavity Surface-Emitting Lasers

    The results of complex studies of static and dynamic performance of 1550 nm range VCSELs, which were created by direct bonding (wafer fusion technique) InAlGaAs/InP optical cavity wafers with AlGaAs/GaAs distr...

    S. A. Blokhin, A. V. Babichev, L. Ya. Karachinsky, I. I. Novikov… in Semiconductors (2023)

  2. No Access

    Article

    Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning

    The effect of the spectral detuning between the spectral gain maximum of an active region based on AlInGaAs nanoheterostructures and vertical microcavity resonance (gain-cavity detuning) on the steady-state- a...

    N. A. Maleev, S. A. Blokhin, M. A. Bobrov, A. G. Kuzmenkov, A. A. Blokhin… in Semiconductors (2015)

  3. No Access

    Article

    Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission

    Highly efficient fast vertical-cavity surface-emitting lasers (VCSELs) for the 850-nm spectral range, promising for the development of optical interconnections with a data transmission rate of 25 Gbit/s per ch...

    S. A. Blokhin, L. Ya. Karachinsky, I. I. Novikov, A. S. Payusov… in Semiconductors (2014)

  4. No Access

    Article

    High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator

    The high-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator are studied using small-signal modulation analysis of the electro...

    A. M. Nadtochiy, W. Hofmann, T. D. Germann, S. A. Blokhin… in Semiconductors (2013)

  5. No Access

    Article

    Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture

    Results of a comparative study of the structural parameters and the static and dynamic characteristics of vertical-cavity surface-emitting lasers (VCSELs) with microresonators based on Al0.15Ga0.85As and Al0.8Ga0...

    A. M. Nadtochiy, S. A. Blokhin, A. G. Kuz’menkov… in Technical Physics Letters (2012)

  6. No Access

    Article

    Effect of AlGaAs-(AlGa) x O y pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots

    Effect of parameters of the AlGaAs-(AlGa) x O y layer forming the pedestal of a microdisk laser with an active region based on InAs/InGaAs quan...

    N. V. Kryzhanovskaya, S. A. Blokhin, M. V. Maximov, A. M. Nadtochy… in Semiconductors (2011)

  7. No Access

    Article

    Reduction of Defect Density in Structures With InAs-GaAs Quantum Dots Grown at Low Temperature for 1.55 μm Range

    Transmission electron microscopy (TEM), and photoluminescence (PL) have been used to evaluate defects and the efficiency of defect-reduction techniques in structures with InAs quantum dots (QDs) for the 1.55 µ...

    N. D. Zakharov, P. Werner, U. Gösele, N. N. Ledentsov… in MRS Online Proceedings Library (2011)

  8. No Access

    Article

    Luminescence of the cadmium telluride quantum dots in the porous silicon oxide

    The luminescence of the CdTe quantum dots deposited on glass substrate and introduced into the porous silicon oxide matrix is investigated. The experimental results on the photoluminescence with one- and two-p...

    N. A. Piskunov, E. D. Maslennikov, L. A. Golovan, P. K. Kashkarov… in Laser Physics (2011)

  9. No Access

    Article

    Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K)

    Lasers that emit in the 1.3 μm wavelength range and include the active region based on InAs quantum dots were grown by the method of molecular-beam epitaxy and have been studied. The cavity includes a multilay...

    L. Ya. Karachinsky, I. I. Novikov, Yu. M. Shernyakov, N. Yu. Gordeev… in Semiconductors (2009)

  10. No Access

    Article

    Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots

    The effect of the excitation level on the intensity and width of whispering-gallery-mode (WGM) lines in microdisks with an asymmetric air/GaAs/AlGaO waveguide and an active region containing InAs quantum dots ...

    A. M. Nadtochiy, S. A. Blokhin, A. V. Sakharov, M. M. Kulagina… in Semiconductors (2008)

  11. No Access

    Chapter and Conference Paper

    TEM Characterization of Self-Organized (In,Ga)N Quantum Dots

    (In,Ga)N/GaN quantum structures were extensively investigated in cross section by transmission electron microscopy. Both strain-sensitive diffraction contrast imaging and highangle annular dark-field imaging ...

    H Kirmse, I Häusler, W Neumann… in Microscopy of Semiconducting Materials 2007 (2008)

  12. Article

    Open Access

    Submonolayer Quantum Dots for High Speed Surface Emitting Lasers

    We report on progress in growth and applications of submonolayer (SML) quantum dots (QDs) in high-speed vertical-cavity surface-emitting lasers (VCSELs). SML deposition enables controlled formation of high den...

    NN Ledentsov, D Bimberg, F Hopfer, A Mutig, VA Shchukin… in Nanoscale Research Letters (2007)

    Download PDF (4842 KB) View Article

  13. No Access

    Article

    Direct observation of charge-carrier capture in an array of self-assembled InAs/GaAs quantum dots

    In this work, charge-carrier capture by an array of self-assembled InAs/GaAs quantum dots was directly observed for the first time by capacitance recharge. It is proposed to process the obtained transient-capt...

    V. I. Zubkov, I. S. Shulgunova… in Bulletin of the Russian Academy of Science… (2007)

  14. No Access

    Article

    Room-temperature 1.3-μm lasing in a microdisk with quantum dots

    Under study are temperature dependences of laser characteristics of a GaAs/(AlGa)xOy microdisk of 6 μm in diameter, fabricated using optical lithography, ion milling with a beam of Ar+ ions, and selective oxidati...

    N. V. Kryzhanovskaya, S. A. Blokhin, A. G. Gladyshev, N. A. Maleev… in Semiconductors (2006)

  15. No Access

    Article

    Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation

    Lasing in microdisks with an asymmetric waveguide formed by selective oxidation was achieved under optical pum** in the temperature range 5–180 K. InGaAs quantum dots (QDs) formed by submonolayer deposition ...

    S. A. Blokhin, N. V. Kryzhanovskaya, A. G. Gladyshev, N. A. Maleev… in Semiconductors (2006)

  16. No Access

    Article

    Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures

    Self-assembled quantum dots (QDs) in double-layer InAs/GaAs structures are studied by resonant photoluminescence and photoluminescence excitation spectroscopy. A weakly correlated (50%) double-layer system wit...

    G. G. Tarasov, Z. Ya. Zhuchenko, M. P. Lisitsa, Yu. I. Mazur, Zh. M. Wang… in Semiconductors (2006)

  17. No Access

    Article

    Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region

    Lasers based on InAs/InGaAs quantum dots grown on metamorphic (In,Ga,Al)As layers deposited by MBE on GaAs substrates exhibited emission near 1.5 μm with a differential quantum efficiency of about 50%. The nar...

    L. Ya. Karachinsky, T. Kettler, N. Yu. Gordeev, I. I. Novikov… in Semiconductors (2005)

  18. No Access

    Article

    Nonequilibrium room-temperature carrier distribution in InAs quantum dots overgrown with thin AlAs/InAlAs layers

    The optical properties of quantum dots (QDs) formed in GaAs or Al0.3Ga0.7As matrices by overgrowth of initial InAs islands formed in the Stranski-Krastanov mode with thin AlAs/InAlAs layers have been studied. It ...

    N. V. Kryzhanovskaya, A. G. Gladyshev, S. A. Blokhin, M. V. Maksimov… in Semiconductors (2005)

  19. No Access

    Article

    The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3–1.55 μm

    Under study is the photoluminescence of two types of MBE-grown heterostructures with quantum-confined InGaAsN/GaAs layers: (1) conventional InGaAsN quantum wells (QWs) in GaAs, and (2) heterostructures with an...

    N. V. Kryzhanovskaya, A. Yu. Egorov, V. V. Mamutin, N. K. Polyakov… in Semiconductors (2005)

  20. No Access

    Article

    Quantum dot photonic devices for lightwave communication

    For InAs-GaAs based quantum dot lasers emitting at 1300 nm digital modulation showing an open eye pattern up to 12 Gb/s at room temperature is demonstrated, at 10 Gb/s the bit error rate is below 10-12 at -2 dBm ...

    D. Bimberg, M. Kuntz, M. Laemmlin in Applied Physics A (2005)

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