120 Result(s)
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Article
1550 nm Range High-Speed Single-Mode Vertical-Cavity Surface-Emitting Lasers
The results of complex studies of static and dynamic performance of 1550 nm range VCSELs, which were created by direct bonding (wafer fusion technique) InAlGaAs/InP optical cavity wafers with AlGaAs/GaAs distr...
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Article
Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning
The effect of the spectral detuning between the spectral gain maximum of an active region based on AlInGaAs nanoheterostructures and vertical microcavity resonance (gain-cavity detuning) on the steady-state- a...
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Article
Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission
Highly efficient fast vertical-cavity surface-emitting lasers (VCSELs) for the 850-nm spectral range, promising for the development of optical interconnections with a data transmission rate of 25 Gbit/s per ch...
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Article
High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator
The high-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator are studied using small-signal modulation analysis of the electro...
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Article
Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture
Results of a comparative study of the structural parameters and the static and dynamic characteristics of vertical-cavity surface-emitting lasers (VCSELs) with microresonators based on Al0.15Ga0.85As and Al0.8Ga0...
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Article
Effect of AlGaAs-(AlGa) x O y pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots
Effect of parameters of the AlGaAs-(AlGa) x O y layer forming the pedestal of a microdisk laser with an active region based on InAs/InGaAs quan...
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Article
Reduction of Defect Density in Structures With InAs-GaAs Quantum Dots Grown at Low Temperature for 1.55 μm Range
Transmission electron microscopy (TEM), and photoluminescence (PL) have been used to evaluate defects and the efficiency of defect-reduction techniques in structures with InAs quantum dots (QDs) for the 1.55 µ...
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Article
Luminescence of the cadmium telluride quantum dots in the porous silicon oxide
The luminescence of the CdTe quantum dots deposited on glass substrate and introduced into the porous silicon oxide matrix is investigated. The experimental results on the photoluminescence with one- and two-p...
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Article
Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K)
Lasers that emit in the 1.3 μm wavelength range and include the active region based on InAs quantum dots were grown by the method of molecular-beam epitaxy and have been studied. The cavity includes a multilay...
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Article
Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots
The effect of the excitation level on the intensity and width of whispering-gallery-mode (WGM) lines in microdisks with an asymmetric air/GaAs/AlGaO waveguide and an active region containing InAs quantum dots ...
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Chapter and Conference Paper
TEM Characterization of Self-Organized (In,Ga)N Quantum Dots
(In,Ga)N/GaN quantum structures were extensively investigated in cross section by transmission electron microscopy. Both strain-sensitive diffraction contrast imaging and highangle annular dark-field imaging ...
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Article
Open AccessSubmonolayer Quantum Dots for High Speed Surface Emitting Lasers
We report on progress in growth and applications of submonolayer (SML) quantum dots (QDs) in high-speed vertical-cavity surface-emitting lasers (VCSELs). SML deposition enables controlled formation of high den...
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Article
Direct observation of charge-carrier capture in an array of self-assembled InAs/GaAs quantum dots
In this work, charge-carrier capture by an array of self-assembled InAs/GaAs quantum dots was directly observed for the first time by capacitance recharge. It is proposed to process the obtained transient-capt...
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Article
Room-temperature 1.3-μm lasing in a microdisk with quantum dots
Under study are temperature dependences of laser characteristics of a GaAs/(AlGa)xOy microdisk of 6 μm in diameter, fabricated using optical lithography, ion milling with a beam of Ar+ ions, and selective oxidati...
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Article
Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation
Lasing in microdisks with an asymmetric waveguide formed by selective oxidation was achieved under optical pum** in the temperature range 5–180 K. InGaAs quantum dots (QDs) formed by submonolayer deposition ...
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Article
Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures
Self-assembled quantum dots (QDs) in double-layer InAs/GaAs structures are studied by resonant photoluminescence and photoluminescence excitation spectroscopy. A weakly correlated (50%) double-layer system wit...
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Article
Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region
Lasers based on InAs/InGaAs quantum dots grown on metamorphic (In,Ga,Al)As layers deposited by MBE on GaAs substrates exhibited emission near 1.5 μm with a differential quantum efficiency of about 50%. The nar...
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Article
Nonequilibrium room-temperature carrier distribution in InAs quantum dots overgrown with thin AlAs/InAlAs layers
The optical properties of quantum dots (QDs) formed in GaAs or Al0.3Ga0.7As matrices by overgrowth of initial InAs islands formed in the Stranski-Krastanov mode with thin AlAs/InAlAs layers have been studied. It ...
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Article
The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3–1.55 μm
Under study is the photoluminescence of two types of MBE-grown heterostructures with quantum-confined InGaAsN/GaAs layers: (1) conventional InGaAsN quantum wells (QWs) in GaAs, and (2) heterostructures with an...
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Article
Quantum dot photonic devices for lightwave communication
For InAs-GaAs based quantum dot lasers emitting at 1300 nm digital modulation showing an open eye pattern up to 12 Gb/s at room temperature is demonstrated, at 10 Gb/s the bit error rate is below 10-12 at -2 dBm ...