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  1. Article

    Open Access

    Anisotropic Confinement, Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum Dots

    A method to determine the effects of the geometry and lateral ordering on the electronic properties of an array of one-dimensional self-assembled quantum dots is discussed. A model that takes into account the ...

    L Villegas-Lelovsky, MD Teodoro, V Lopez-Richard, C Calseverino… in Nanoscale Res Lett (2010)

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  2. Article

    Open Access

    Cooperative Effects in the Photoluminescence of (In,Ga)As/GaAs Quantum Dot Chain Structures

    Multilayer In0.4Ga0.6As/GaAs quantum dot (QD) chain samples are investigated by means of cw and time-resolved photoluminescence (PL) spectroscopy in order to study the peculiarities of interdot coupling in such n...

    Yu I Mazur, VG Dorogan, E Marega Jr, DF Cesar… in Nanoscale Research Letters (2010)

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  3. No Access

    Article

    Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chains

    Using polarized Raman spectroscopy and high resolution X-ray diffraction we have investigated self-organized In0.45Ga0.55As quantum-dot chains in InGaAs/GaAs multilayer structures. It is shown that the formation ...

    V. V. Strelchuk, Yu. I. Mazur, Zh. M. Wang… in Journal of Materials Science: Materials in… (2008)

  4. No Access

    Article

    Investigation of deep levels in InGaAs channels comprising thin layers of InAs

    The generation-recombination noise in doped-channel In0.53Ga0.47As/In0.52Al0.48As/InP micro-Hall devices is characterized using deep level noise spectroscopy. Three noise sources are detected with trap energies o...

    J. Dobbert, Vas. P. Kunets, T. Al. Morgan… in Journal of Materials Science: Materials in… (2008)

  5. No Access

    Article

    Microstructural Aspects of Nucleation and Growth of (In,Ga)As-GaAs(001) Islands with Low Indium Content

    Molecular beam epitaxy growth of multilayer In x Ga1-x As/GaAs(001) structures with low indium content (x = 0.20–0.35) was studied by X-ray diffraction an...

    V.P. Kladko, V.V. Strelchuk, A.F. Kolomys… in Journal of Electronic Materials (2007)

  6. Article

    Open Access

    Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties

    InAs/GaAs heterostructures have been simultaneously grown by molecular beam epitaxy on GaAs (100), GaAs (100) with a 2° misorientation angle towards [01−1], and GaAs (n 11)B (n = 9, 7, 5) substrates. While the su...

    BL Liang, Zh M Wang, KA Sablon, Yu I Mazur, GJ Salamo in Nanoscale Research Letters (2007)

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  7. Article

    Open Access

    Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

    The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epi...

    N. W. Strom, Zh M. Wang, J. H. Lee, Z. Y. AbuWaar… in Nanoscale Research Letters (2007)

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  8. No Access

    Article

    Lateral ordering of quantum dots and wires in the (In,Ga)As/GaAs(100) multilayer structures

    The surface morphology and optical properties of the (In,Ga)As/GaAs(100) multilayer structures with self-organized quantum dots and quantum wires, which were grown by molecular-beam epitaxy, are investigated. ...

    V. V. Strel’chuk, P. M. Lytvyn, A. F. Kolomys, M. Ya. Valakh… in Semiconductors (2007)

  9. No Access

    Article

    Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures

    Self-assembled quantum dots (QDs) in double-layer InAs/GaAs structures are studied by resonant photoluminescence and photoluminescence excitation spectroscopy. A weakly correlated (50%) double-layer system wit...

    G. G. Tarasov, Z. Ya. Zhuchenko, M. P. Lisitsa, Yu. I. Mazur, Zh. M. Wang… in Semiconductors (2006)

  10. No Access

    Article

    Resonant Raman scattering and atomic force microscopy of InGaAs/GaAs multilayer nanostructures with quantum dots

    The transition from two-dimensional (2D) pseudomorphic growth to the three-dimensional (3D) (nanoisland) growth in InxGa1−x As/GaAs multilayer structures grown by molecular-beam epitaxy was investigated by atomic...

    M. Ya. Valakh, V. V. Strelchuk, A. F. Kolomys, Yu. I. Mazur, Z. M. Wang… in Semiconductors (2005)