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  1. No Access

    Article

    Study of InP/GaP Quantum Wells Grown by Vapor Phase Epitaxy

    We consider structure with single quantum well InP 5 nm thick grown by vapor phase epitaxy on n-GaP wafer. By classical capacitance-voltage profiling of Schottky diode on sample and electrochemical profiling, ele...

    A. I. Baranov, A. V. Uvarov, A. A. Maksimova… in Technical Physics Letters (2023)

  2. No Access

    Article

    Through Concentration Profiling of Heterojunction Solar Cells

    Electrochemical capacitance–voltage profiling has been used to examine heterojunction solar cells based on single-crystal silicon. Specific features of the electrochemical capacitance–voltage profiling of mode...

    G. E. Yakovlev, I. A. Nyapshaev, I. S. Shakhrai… in Technical Physics Letters (2019)

  3. No Access

    Article

    Technique for the Electrochemical Capacitance–Voltage Profiling of Heavily Doped Structures with a Sharp Do** Profile

    The specific features of applying electrochemical capacitance–voltage profiling to investigate heavily doped structures with a sharp do** profile are considered. Criteria are presented, and recommendations a...

    D. S. Frolov, G. E. Yakovlev, V. I. Zubkov in Semiconductors (2019)

  4. No Access

    Article

    Experimental Detection of Resonant Tunneling in the Doped Structure with a Single Quantum Well by the Admittance Spectroscopy Method

    The admittance measurements of heterostructures with quantum wells (QW) InxGa1 – xAs/GaAs (0.19 ≤ x ≤ 0.3) precisely grown by the MOCVD method were carried out. By means of the admittance spectroscopy method, the...

    Ya. V. Ivanova, V. I. Zubkov, A. V. Solomonov in Technical Physics Letters (2018)

  5. No Access

    Article

    Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions

    GaAs light-emitting (LED) and HEMT structures with δ-doped regions, InGaAs/GaAs quantum wells, and surface layers of InAs/GaAs quantum dots were studied by means of the electrochemical capacitance- voltage pro...

    G. E. Yakovlev, M. V. Dorokhin, V. I. Zubkov, A. L. Dudin… in Semiconductors (2018)

  6. No Access

    Article

    Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics

    We performed numerical self-consistent solution of Schrödinger and Poisson equations for GaAs/InGaAs/AlGaAs pHEMT structures with quantum well. Based on the results we calculated optical transition matrix elem...

    M. S. Mironova, V. I. Zubkov, A. L. Dudin, G. F. Glinskii in Semiconductors (2018)

  7. No Access

    Article

    Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence

    Optical and transport properties of the heterostructure with the InAs/GaAs quantum dots doped with manganese or chromium atoms in the course of growth using metal-organic vapor phase epitaxy (MOVPE) are analyz...

    M. V. Dorokhin, S. V. Zaitsev, A. V. Rykov, A. V. Zdoroveyshchev… in Technical Physics (2017)

  8. No Access

    Article

    Automated instrumentation for nonequilibrium capacitance–voltage measurements at a semiconductor–electrolyte interface

    An apparatus for measuring nonequilibrium capacitance–voltage characteristics in semiconductor structures with electrolytic contacts is described. A pulse CV method was used in which a space-charge region in t...

    D. S. Frolov, V. I. Zubkov in Instruments and Experimental Techniques (2017)

  9. No Access

    Article

    Investigation of Ion-Implanted Photosensitive Silicon Structures by Electrochemical Capacitance–Voltage Profiling

    The method of electrochemical capacitance–voltage profiling is used to study boron-implanted silicon structures for CCD matrices with backside illumination. A series of specially prepared structures with diffe...

    G. E. Yakovlev, D. S. Frolov, A. V. Zubkova, E. E. Levina, V. I. Zubkov… in Semiconductors (2016)

  10. No Access

    Article

    Monte Carlo Simulation of the Radiation Output from a Led Structure with Textured Interfaces

    A mathematical model of the radiation output from a LED structure is developed on the basis of the corpuscular Monte Carlo method. As a result of simulation of LED structures, regularities of the influence of ...

    V. I. Zubkov, A. S. Evseenkov, T. A. Orlova, A. V. Zubkova in Russian Physics Journal (2015)

  11. No Access

    Article

    An automated system based on cryogenic probe station for integrated studies of semiconductor light-emitting structures and wafers in the range of 15 to 475 K

    An automated system for integrated electrophysical and optical studies of semiconductor nanoheterostructures, which operates in a wide temperature range from 15 to 475 K, is designed. The setup is intended to ...

    V. I. Zubkov, O. V. Kucherova, I. N. Yakovlev, A. V. Solomonov in Russian Microelectronics (2015)

  12. No Access

    Article

    Analysis of the electrostatic interaction of charges in multiple InGaAs/GaAs quantum wells by admittance-spectroscopy methods

    The effect of the electrostatic interaction of charges in multiple quantum wells of a doped heterostructure is studied by admittance spectroscopy methods and numerical self-consistent calculations. Samples con...

    V. I. Zubkov, I. N. Yakovlev, V. G. Litvinov, A. V. Ermachihin… in Semiconductors (2014)

  13. No Access

    Article

    The magnetic susceptibility of a composite medium consisting of anisotropic ferrite particles with differently ordered orientations of anisotropy axes

    The magnetic susceptibility tensor for a composite medium consisting of specially oriented anisotropic ferrite particles is calculated. The lower and upper boundaries of the frequency range are determined for ...

    V. I. Zubkov, V. I. Shcheglov in Journal of Communications Technology and Electronics (2013)

  14. No Access

    Article

    Magnetostatic waves in a tangentially magnetized ferrite plate with a normal uniaxial anisotropy under the conditions for orientational transition

    Propagation of magnetostatic waves in a tangentially magnetized ferrite plate with a normal uniaxial anisotropy under the conditions for the orientational phase transition of the second order is considered. Di...

    V. I. Zubkov, V. I. Shcheglov in Journal of Communications Technology and Electronics (2012)

  15. No Access

    Article

    Nondestructive diagnostics of nanoheterostructures with InGaN/GaN multiple quantum wells by thermal admittance spectroscopy

    On the basis of the designed complex of low-temperature admittance spectroscopy, the electron spectrum of semiconductor light emitting diode (LED) heterostructures with InGaN/GaN multiple quantum wells was inv...

    O. V. Kucherova, V. I. Zubkov, E. O. Tsvelev, I. N. Yakovlev… in Inorganic Materials (2011)

  16. No Access

    Article

    Admittance spectroscopy as a method for investigating relaxation processes in quantum-sized heterostructures

    The wide possibilities of admittance spectroscopy as a tool for the effective study of relaxation processes in quantum-sized heterostructures are demonstrated by the example of comprehensive investigations of ...

    V. I. Zubkov, I. N. Yakovlev… in Bulletin of the Russian Academy of Science… (2011)

  17. No Access

    Article

    Investigating the charge relaxation in semiconductor heterostructures with quantum wells by means of admittance spectroscopy

    Charge is evaluated as a function of temperature, based on the analysis and nmathematical processing of experimental capacitance-voltage characteristics obtained in frequency range of 1 kHz to 1 MHz and temper...

    A. N. Petrovskaya, V. I. Zubkov in Bulletin of the Russian Academy of Sciences: Physics (2011)

  18. No Access

    Article

    Propagation of magnetostatic surface waves in a ferrite plate magnetized by a spatially periodic transverse field

    Propagation of magnetostatic surface waves (MSSWs) in a ferrite plate magnetized by a spatially periodic transverse field has been considered. The parameters of MSSW propagation have been calculated by the Ham...

    V. I. Zubkov, V. I. Shcheglov in Journal of Communications Technology and Electronics (2011)

  19. No Access

    Article

    Magnetic susceptibility of a composite medium with variable parameters that consists of arbitrarily oriented anisotropic ferrite particles

    The dynamic high-frequency tensor susceptibility of a composite medium consisting of independent chaotically oriented uniaxially anisotropic ferrite spheres is calculated by averaging over directions under the...

    V. I. Zubkov, V. I. Shcheglov in Journal of Communications Technology and Electronics (2010)

  20. No Access

    Article

    Observation of localized centers with anomalous behavior in light-emitting heterostructures with multiple InGaN/GaN quantum wells

    For the first time, using a complex of admittance spectroscopy, light-emitting heterostructures with InGaN/GaN multiple quantum wells were studied in a wide temperature range of 6–300 K. Three peaks are found ...

    O. V. Kucherova, V. I. Zubkov, A. V. Solomonov, D. V. Davydov in Semiconductors (2010)

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