Abstract
Lasers that emit in the 1.3 μm wavelength range and include the active region based on InAs quantum dots were grown by the method of molecular-beam epitaxy and have been studied. The cavity includes a multilayer interference reflector, which brings about the fact that a large factor of optical confinement and low leakage losses are obtained only for the light propagating at some angle and, consequently, having a strictly definite wavelength. It is shown that, due to the use of such a waveguide structure, the temperature shift of the lasing wavelength is 0.2 nm/K, which is 2.5 times smaller than this shift in the lasers with quantum dots and with a conventional structure of the waveguide. The lasers with the stripe-contact width W = 10 μm exhibited the spatially single-mode emission, which verifies the advantages of the suggested nonconventional structure of the optical waveguide.
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Original Russian Text © L.Ya. Karachinsky, I.I. Novikov, Yu.M. Shernyakov, N.Yu. Gordeev, A.S. Payusov, M.V. Maximov, S.S. Mikhrin, M.B. Lifshits, V.A. Shchukin, P.S. Kop’ev, N.N. Ledentsov, D. Bimberg, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 5, pp. 708–713.
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Karachinsky, L.Y., Novikov, I.I., Shernyakov, Y.M. et al. Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K). Semiconductors 43, 680–684 (2009). https://doi.org/10.1134/S1063782609050261
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DOI: https://doi.org/10.1134/S1063782609050261