Summary
(In,Ga)N/GaN quantum structures were extensively investigated in cross section by transmission electron microscopy. Both strain-sensitive diffraction contrast imaging and highangle annular dark-field imaging proved the formation of quantum dots. The quantum dots exhibit a homogeneous size distribution as well as a regular arrangement within the individual layers. High-angle annular dark-field imaging was utilized to determine the thickness of the layers on the atomic scale.
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Kirmse, H., Häusler, I., Neumann, W., Strittmatter, A., Reißmann, L., Bimberg, D. (2008). TEM Characterization of Self-Organized (In,Ga)N Quantum Dots. In: Cullis, A.G., Midgley, P.A. (eds) Microscopy of Semiconducting Materials 2007. Springer Proceedings in Physics, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8615-1_56
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DOI: https://doi.org/10.1007/978-1-4020-8615-1_56
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