Abstract
The effect of the excitation level on the intensity and width of whispering-gallery-mode (WGM) lines in microdisks with an asymmetric air/GaAs/AlGaO waveguide and an active region containing InAs quantum dots is studied using microphotoluminescence spectroscopy. At high pump levels, overheating of the active region takes place, which leads to a long-wavelength shift of the gain spectrum; in addition, the shape of the spectrum changes due to the saturation of the ground and excited states and to many-particle interactions. As a consequence, the behavior of intensities and linewidths of WGMs as functions of the optical-pump power density is determined by the spectral positions of the modes with respect to the gain peaks and may differ considerably for different modes. The long-wavelength shift of WGM lines caused by active-region overheating is partially compensated by a short-wavelength shift, which occurs due to the dependence of the effective refractive index of the waveguide on the concentration of free charge carriers.
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Original Russian Text © A.M. Nadtochiy, S.A. Blokhin, A.V. Sakharov, M.M. Kulagina, Yu.M. Zadiranov, N.Yu. Gordeev, M.V. Maksimov, V.M. Ustinov, N.N. Ledentsov, E. Stock, T. Warming, D. Bimberg, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 10, pp. 1252–1257.
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Nadtochiy, A.M., Blokhin, S.A., Sakharov, A.V. et al. Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots. Semiconductors 42, 1228–1233 (2008). https://doi.org/10.1134/S1063782608100151
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DOI: https://doi.org/10.1134/S1063782608100151