23 Result(s)

Article

Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures

Self-assembled quantum dots (QDs) in double-layer InAs/GaAs structures are studied by resonant photoluminescence and photoluminescence excitation spectroscopy. A weakly correlated (50%) double-layer system wit...

G. G. Tarasov, Z. Ya. Zhuchenko, M. P. Lisitsa, Yu. I. Mazur, Zh. M. Wang… in Semiconductors (2006)

Article

A model of photoinduced annealing of intrinsic defects in hexagonal CdS_xSe_1−x quantum dots

A possible mechanism of photoinduced annealing of intrinsic defects in quantum dots with a hexagonal crystal structure is justified on the basis of the studies of the kinetics of photoinduced decay of luminesc...

V. P. Kunets, N. R. Kulish, M. P. Lisitsa, V. P. Bryksa in Semiconductors (2004)

Article

Excitonic recombination near the mobility edge in CdSe/ZnSe nanostructures

The low-temperature photoluminescence and Raman scattering in CdSe/ZnSe nanostructures with individual CdSe inserts of 1.5 and 3.0 monolayers in nominal thickness were studied. The energy position of the photo...

M. Ya. Valakh, M. P. Lisitsa, V. V. Strelchuk, M. V. Vuychik… in Semiconductors (2003)

Article

Optical Dimensional Phenomena in Thin Layers of Gold and Atomic Semiconductors

We have investigated optical dimensional phenomena which are manifested as the thickness dependences of the indices of refraction n and absorption k and of the magnitude of the quasi‐Brewster angle of thin layers...

S. A. Kovalenko, M. P. Lisitsa in Journal of Applied Spectroscopy (2002)

Article

Temperature dependence of the optical energy gap for the CdS_xSe_1−x quantum dots

A temperature dependence of the optical energy gap E _g (T) for the CdS_xSe_1−x quantum dots synthesized in a borosilicate glass matrix was investigated in the range of 4.2–500 K....

V. P. Kunets, N. R. Kulish, Vas. P. Kunets, M. P. Lisitsa, N. I. Malysh in Semiconductors (2002)

Article

The effect of dislocations formed during growth on the structure and photoluminescence of i-n ⁻-n-n ⁺-GaAs epilayers and on the related microwave transistors parameters

The structure of two types of GaAs i-n ⁻-n-n ⁺ epilayers on GaAs〈100〉 semi-insulating substrates was studied by electron microscopy. The low-temperature photoluminescence spectra were measured and their special f...

M. P. Lisitsa, F. V. Motsnyi, V. F. Motsnyi, I. V. Prokopenko in Semiconductors (2001)

Article

Discovery of hyperbolic excitons in layered semiconductor BiI₃

Hyperbolic excitons have been detected in layered semiconductor BiI₃. Their main parameters have been evaluated.

S. V. Virko, M. P. Lisitsa, F. V. Motsnyi in Physics of the Solid State (2000)

Article

Effect of continuous-wave-laser radiation intensity on the temperature of CdS _x Se_1−x nanocrystals in a glass matrix

It is shown that intense optical excitation of CdS_xSe_1−x nanocrystals in a glass matrix in the region of interband transitions leads to their heating, which manifests itself in a reversible longwave shift of the ...

M. Y. Valakh, N. R. Kulish, V. P. Kunets, M. P. Lisitsa in Journal of Applied Spectroscopy (1998)

Article

Determination of the parameters of semiconductor quantum dots in glassy matrices from the absorption and luminescence spectra and from saturation of the optical absorption

Optical methods are described for determining the parameters of semiconducting quantum dots synthesized in a glassy borosilicate matrix. The limitations of these methods and the magnitudes of their errors are ...

N. R. Kulish, V. P. Kunets, M. P. Lisitsa in Physics of the Solid State (1997)

Article

Raman scattering in A₃B₂C₉ ferroelectric crystals

Raman spectra of some A₃B₂C₉ ferroelectric crystals (here A=Cs, Rb; B=Sb, Bi; C=Br) have been obtained, and a number of high-frequency bands have been assigned. The Rb₃Bi₂Br₉ and Rb₃Sb₂Br₉ crystals are shown to d...

M. Ya. Valakh, M. P. Lisitsa, A. V. Trilis, A. M. Yaremko… in Physics of the Solid State (1997)

Article

Spectroscopy of defects in KBr(NO ₂ ⁻ ) and KI(NO^{2 −}) crystals under low-temperature UV irradiation

L. I. Berezhinskii, M. P. Lisitsa, N. L. Taranenko in Journal of Applied Spectroscopy (1990)

Article

BiI₃ exciton-spectrum effects caused by do** and isoelectronic elements having unfilled 3d and 4f shells

M. P. Lisitsa, F. V. Motsnyi, S. O. Sergeev in Journal of Applied Spectroscopy (1988)

Article

Influence of annealing upon the N color centers in gamma-irradiated LiF crystals

M. P. Lisitsa, V. V. Silenko, I. N. Khalimonova in Journal of Applied Spectroscopy (1987)

Article

Multilayered coatings with suppression of two neighboring high-reflection bands

M. P. Lisitsa, S. V. Orlov, Yu. A. Pervak… in Journal of Applied Spectroscopy (1987)

Article

The dispersion of the refractive index of semiconductors at the edge of their intrinsic absorption

T. A. Kudykina, M. P. Lisitsa in Journal of Applied Spectroscopy (1986)

Article

Nonlinear optical activity

M. P. Lisitsa in Journal of Applied Spectroscopy (1982)

Article

Use of Sellmeier formula and the Rozhdestvenskii hook method near the exciton transitions of a CdS single crystal

M. P. Lisitsa, S. F. Terekhova in Journal of Applied Spectroscopy (1982)

Article

Dispersion of CdS in the exciton-transition region

M. P. Lisitsa, S. A. Boiko, S. F. Terekhova… in Journal of Applied Spectroscopy (1982)

Article

Resonance interactions in the phonon spectra of crystals

M. P. Lisitsa, A. M. Yaremko in Journal of Applied Spectroscopy (1981)

Article

Book review

M. P. Lisitsa in Journal of Applied Spectroscopy (1978)