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    Luminescence of the cadmium telluride quantum dots in the porous silicon oxide

    The luminescence of the CdTe quantum dots deposited on glass substrate and introduced into the porous silicon oxide matrix is investigated. The experimental results on the photoluminescence with one- and two-p...

    N. A. Piskunov, E. D. Maslennikov, L. A. Golovan, P. K. Kashkarov in Laser Physics (2011)

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    Measurement of intensity of the second optical harmonic in heteroepitaxial cadmium-mercury telluride structures

    Features of the generation of the second optical harmonic in the heterostructures HgCdTe/GaAs and CdTe/HgCdTe/GaAs manufactured by means of molecular-beam epitaxy are experimentally investigated for the first ...

    I. D. Burlakov, A. V. Demin, G. G. Levin, N. A. Piskunov in Measurement Techniques (2010)

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    Modification of birefringence properties of nanostructured silicon with a change in the level of substrate do** with boron

    Birefringence of porous-silicon films prepared by electrochemical etching of boron-doped Si(110) wafers with a resistivity of 25–45 mΘ cm has been studied. The samples are found to exhibit the properties of a ...

    N. A. Piskunov, S. V. Zabotnov, D. A. Mamichev, L. A. Golovan’ in Crystallography Reports (2007)