Abstract
The high-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator are studied using small-signal modulation analysis of the electroreflectance. The experimental data obtained are approximated using the suggested equivalent electrical circuit, which accounts for the formation of a nonequilibrium space charge in the carrier-depletion region of the modulator. The bandwidth of the high-frequency electrical-signal transfer to the electro-optical region, determined for the suggested equivalent electrical circuit of the modulator, is shown to be 3GHz.
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Original Russian Text © A.M. Nadtochiy, W. Hofmann, T.D. Germann, S.A. Blokhin, L. Ya. Karachinskiy, M.V. Maximov, V.A. Shchukin, A.E. Zhukov, D. Bimberg, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 5, pp. 684–689.
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Nadtochiy, A.M., Hofmann, W., Germann, T.D. et al. High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator. Semiconductors 47, 695–700 (2013). https://doi.org/10.1134/S1063782613050175
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DOI: https://doi.org/10.1134/S1063782613050175