Search
Search Results
-
MOS Capacitors, MOS Transistors, and Charge-Transfer Devices
The chapter has two main parts: the first one addresses the functioning of the MOS capacitor and MOS transistor, considering the case of a p-type...
-
MOS-Only and MOS-C Circuits
The world of analog IC, the design of which does not include external passive components such as resistances, capacitances, or inductances, has...
-
MOS Technologies for Circuit Integration
Since about 1985, MOS technologies have gained the most significant economic importance for the production of digital and also analogue integrated...
-
Leistungs-MOS-Feldeffekttransistor
Dargestellt wird die Extraktion der SPICE-Modellparameter des Leistungs-MOS-Feldeffekttransistors IRF 150. Statische Parameter wie die...
-
CDBA-Based MOS-C Quadrature Oscillator
In this article, MOS-C resistor-based quadrature sinusoidal oscillator configuration is proposed. The proposed structure is appropriate for the MOS-C...
-
MOS-Feldeffekttransistoren
Beschrieben wird die Extraktion der Modellparameter von N-Kanal- und P-Kanal-MOSFET aus dem CMOS-Array CA 3600. Einige Parameter wie die...
-
MOS-Feldeffekttransistoren
Die gestellten Fragen beziehen sich zunächst auf die Funktion und die Kennlinien von Anreicherungs- und Verarmungs-MOSFET. Die gegebenen Antworten...
-
Leistungs-MOS-Feldeffekttransistor
Dargestellt wird die Extraktion der SPICE-Modellparameter des Leistungs-MOS-Feldeffekttransistors IRF 150. Statische Parameter wie die...
-
Multigate MOS-HEMT
Gallium nitride (GaN) based High-Electron-Mobility Transistors (HEMTs), and in particular, aluminum gallium nitride (AlGaN)/GaN devices have become a...
-
MOS-Feldeffekttransistoren
Beschrieben wird die Extraktion der Modellparameter von N-Kanal- und P-Kanal-MOSFET aus dem CMOS-Array CA 3600. Einige Parameter wie die...
-
An Overview of the NBTI Phenomenon in MOS Devices
AbstractBased on the vast perusal, an overview on the negative bias temperature instability (NBTI) effect in metal oxide semiconductor (MOS) devices,...
-
MOS-Technologien zur Schaltungsintegration
Ausgehend von den PMOS- und NMOS-Prozessen in Aluminium-Gate-Technik wird der selbstjustierende NMOS-Prozess mit Polysilizium-Gate vorgestellt....
-
Emerging MoS2 Wafer-Scale Technique for Integrated Circuits
As an outstanding representative of layered materials, molybdenum disulfide (MoS 2 ) has excellent physical properties, such as high carrier mobility,...
-
Design and Optimization of MOS Capacitor based Radiation Sensor for Space Applications
This paper proposes a unique sensor for detecting total ionizing dose (TID) on metal–oxide–semiconductor (MOS) devices. The proposed capacitive...
-
Potential application of C-MoS2 monolayer for identifying lung cancer biomarkers in exhaled breath: a DFT study
This paper presents a computational study investigating the potential of MoS 2 and C-doped MoS 2 monolayers as breath sensors for detecting Volatile...
-
Electronic and Transport Properties of Covalent Functionalized Monolayer MoS2 by Ferrocene Derivatives
We have investigated the electronic and transport properties of a series of 2D Fc(X) n –MoS 2 (Fc=Fe(Cp) 2 ; X=SiH 2 , CH 2 , CH=CH, or C≡C; n = 1 or 2)...
-
Effects of copper-coated MoS2 on friction performance of bronze-graphite-MoS2 self-lubricating materials
Two kinds of bronze-graphite-MoS 2 self-lubricating materials with copper-coated MoS 2 and uncoated MoS 2 were prepared by powder metallurgy. Friction...
-
Investigation of Low Energy Electron Irradiated SiO2 Based MOS Devices by Capacitance-Voltage and Thermally Stimulated Current Techniques
AbstractSilicon oxide based and aluminum gated MOS structures fabricated on n-type silicon are investigated after irradiation with low energy...
-
MOS-Feldeffekttransistoren
Die gestellten Fragen beziehen sich zunächst auf die Funktion und die Kennlinien von Anreicherungs- und Verarmungs-MOSFET. Die gegebenen Antworten...
-
Influence of the Passivation Layers on the Self-Heating Effect in the Double Channel AlGaN/GaN MOS-HEMT Device
AbstractIn this paper, a Two-Channel AlGaN/GaN structure of Metal-Oxide Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) with TiO 2 gate...
