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Multigate MOS-HEMT

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HEMT Technology and Applications

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Abstract

Gallium nitride (GaN) based High-Electron-Mobility Transistors (HEMTs), and in particular, aluminum gallium nitride (AlGaN)/GaN devices have become a popular choice due to their ability to produce higher power densities at higher frequencies as compared to their silicon (Si) and gallium arsenide (GaAs) based counterparts. GaN-based HEMTs have also proven to be excellent candidates for amplifiers operating at higher power levels, high temperatures, and in robust environments. This chapter discusses how the performance of such GaN-based HEMTs can be enhanced by introducing a gate oxide and an underlapped structure. The chapter also delves into the advantages of multigate structures and the use of quaternary indium aluminum gallium nitride (InAlGaN) compound to deliver higher breakdown voltage.

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  1. Department of Electronics and Communication Engineering, Heritage Institute of Technology, Kolkata, India

    Atanu Kundu & Mousiki Kar

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  1. Atanu Kundu
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Correspondence to Mousiki Kar .

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  1. Department of Electronics and Communication Engineering, National Institute Of Technology Silchar, Silchar, Assam, India

    Trupti Ranjan Lenka

  2. Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ, USA

    Hieu Pham Trung Nguyen

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Kundu, A., Kar, M. (2023). Multigate MOS-HEMT. In: Lenka, T.R., Nguyen, H.P.T. (eds) HEMT Technology and Applications. Springer Tracts in Electrical and Electronics Engineering. Springer, Singapore. https://doi.org/10.1007/978-981-19-2165-0_9

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  • DOI: https://doi.org/10.1007/978-981-19-2165-0_9

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